Abstract: In a first aspect, an inventive apparatus for imaging a chip on a wafer includes a combined diamond chip image and kerf image having a plurality of sloped sides. The combined diamond chip image and kerf image includes a diamond chip image comprising a plurality of chip image rows that are parallel to at least one diagonal of the diamond chip image, and includes a kerf image adjacent to the diamond chip image. The kerf image comprises at least one kerf image row that is parallel to the at least one diagonal of the diamond chip image. The apparatus further includes a blocking material extending from the combined diamond chip image and kerf image to at least a periphery of an exposure field of a stepper. In a second aspect the imaging apparatus comprises an n-sided polygon-shaped combined chip image and kerf image. Also provided are inventive methods of manufacturing chips, and wafers manufactured in accordance with the inventive methods.

Abstract: The invention provides a design and an integrated circuit having a substantially uniform density and electrical characteristics between parts of the IC that are angled at 45 degrees relative to one another. In particular, the invention provides fill tiling patterns oriented substantially uniformly to electrical structures of either orthogonal or 45 degree angle orientation.

Abstract: A method and structure for checking legality of books in a phase-shift circuit design mask which arranges the books in rows, determines a book polarity of phase shift mask features of each of the books, sums polarities of the books within each of the rows to produce a row polarity of phase shift mask features of the row, checks whether the row polarity complies with legal requirements of the circuit design, and modifies placement of the books until all of the rows comply with the legal requirements.

Abstract: A method of analyzing the power distribution in a chip containing one or more voltage islands, each voltage island having a power distribution network connected to a chip-level power distribution network by one or more voltage translation interface circuits. The method comprising: analyzing the voltage-island power distribution networks independently of the chip-level power distribution network to obtain voltage translation interface circuit currents; using the voltage translation interface circuit currents as input to a model of the chip-level power distribution network to obtain voltage translation interface circuit input voltages; and calculating voltage translation interface circuit output voltages based on the voltage translation interface circuit input voltages, the voltage translation interface circuit currents, and current-voltage characteristics of the voltage translation interface circuits.

Abstract: A method of analyzing the power distribution in a chip containing one or more voltage islands, each voltage island having a power distribution network connected to a chip-level power distribution network by one or more voltage translation interface circuits. The method comprising: analyzing the voltage-island power distribution networks independently of the chip-level power distribution network to obtain voltage translation interface circuit currents; using the voltage translation interface circuit currents as input to a model of the chip-level power distribution network to obtain voltage translation interface circuit input voltages; and calculating voltage translation interface circuit output voltages based on the voltage translation interface circuit input voltages, the voltage translation interface circuit currents, and current-voltage characteristics of the voltage translation interface circuits.

Abstract: A method and structure for checking legality of books in a phase-shift circuit design mask which arranges the books in rows, determines a book polarity of phase shift mask features of each of the books, sums polarities of the books within each of the rows to produce a row polarity of phase shift mask features of the row, checks whether the row polarity complies with legal requirements of the circuit design, and modifies placement of the books until all of the rows comply with the legal requirements.

Abstract: A method of analyzing supply voltage drops in a power grid for distributing power to an integrated circuit chip during design. The method initially comprises providing a library of circuits for use in designing an integrated circuit chip and determining a supply current requirement and an operating voltage range for each circuit in the circuit library. The method then includes calculating an admittance matrix representing the power grid with a pre-specified array of circuit ports defined by intersection of the power grid and a modeling grid, assigning regions of the power grid to each of the ports, and placing a set of circuits from the circuit library in regions on the power grid.

Abstract: A method of analyzing supply voltage drops in a power grid for distributing power to an integrated circuit chip during design. The method initially comprises providing a library of circuits for use in designing an integrated circuit chip and determining a supply current requirement and an operating voltage range for each circuit in the circuit library. The method then includes calculating an admittance matrix representing the power grid with a pre-specified array of circuit ports defined by intersection of the power grid and a modeling grid, assigning regions of the power grid to each of the ports, and placing a set of circuits from the circuit library in regions on the power grid.

Abstract: A method for fabricating Schottky photodiodes includes the steps of: forming a base electrode on the principal substrate surface; depositing a layer of N+ amorphous silicon on the base electrode; depositing a layer of intrinsic silicon on the N+ amorphous silicon layer; depositing a Schottky contact on the intrinsic silicon layer; and selectively patterning the Schottky contact and the two silicon layers with the same photoresist mask to form a Schottky photodiode island.

Abstract: A Schottky photodiode formed by the method including the steps of: forming a base electrode on the principal substrate surface; depositing a layer of N+ amorphous silicon on the base electrode; depositing a layer of intrinsic silicon on the N+ amorphous silicon layer; depositing a Schottky contact on the intrinsic silicon layer; and selectively patterning the Schottky contact and the two silicon layers with the same photoresist mask to form a Schottky photodiode island.