Abstract: A smart pen includes a body, a pen tip portion at an end of the body, and including a pen tip extending in a first direction, a pen tip support configured to support the pen tip, and a reflector on one surface of the pen tip support, and having a curvature, and a light emitter supported by the body, configured to emit light, and inclined at an angle with respect to the first direction.

Abstract: The present disclosure relates to a smart pen and a display device using the same, in which a reflective light reception rate may be enhanced through a light output structure to increase a code pattern and code information recognition rate of a display panel. According to an embodiment of the disclosure, smart pen comprising a body portion, a pen tip portion formed on one end of the body portion to form a path of light emitted from a light emitting portion in an end direction at one side, a code detector detecting shape data for code patterns by applying light to the pen tip portion and receiving light reflected from a display panel and the pen tip portion, and a code processor generating coordinate data by using the shape data and transmitting the coordinate data to a main processor for driving the display panel.

Abstract: A display device has excellent luminous efficiency, the display device including: a display portion including pixels defined by a pixel defining layer; and a touch portion on the display portion. The touch portion includes: a first touch electrode overlapping the pixel defining layer; a first organic layer on the first touch electrode; a second touch electrode contacting the first touch electrode; a second organic layer on the second touch electrode; and a high refractive index layer on the first organic layer, the second touch electrode, and the second organic layer. The high refractive index layer is disposed between adjacent second touch electrodes in a plan view and includes a first convex surface protruding toward the display portion and overlapping one of the pixels.

Abstract: A flexible window includes: a first film layer through which light is incident to the flexible window from a display panel of a flexible display device, the first film layer including: a plurality of stacked first sub-film layers, an adhesive layer disposed between adjacent first sub-film layers, and an index matching layer disposed between a first sub-film layer and the adhesive layer adjacent thereto; and a second film layer on the first film layer to be disposed further from the display panel than the first film layer, the second film layer having a Young's modulus lower than that of each of the first sub-film layers. Within the flexible window, a refractive index of the index matching layer has a value between a refractive index of each of the first sub-film layers and a refractive index of the adhesive layer.

Abstract: A display device has excellent luminous efficiency, the display device including: a display portion including pixels defined by a pixel defining layer; and a touch portion on the display portion. The touch portion includes: a first touch electrode overlapping the pixel defining layer; a first organic layer on the first touch electrode; a second touch electrode contacting the first touch electrode; a second organic layer on the second touch electrode; and a high refractive index layer on the first organic layer, the second touch electrode, and the second organic layer. The high refractive index layer is disposed between adjacent second touch electrodes in a plan view and includes a first convex surface protruding toward the display portion and overlapping one of the pixels.

Abstract: A flexible window includes: a first film layer through which light is incident to the flexible window from a display panel of a flexible display device, the first film layer including: a plurality of stacked first sub-film layers, an adhesive layer disposed between adjacent first sub-film layers, and an index matching layer disposed between a first sub-film layer and the adhesive layer adjacent thereto; and a second film layer on the first film layer to be disposed further from the display panel than the first film layer, the second film layer having a Young's modulus lower than that of each of the first sub-film layers. Within the flexible window, a refractive index of the index matching layer has a value between a refractive index of each of the first sub-film layers and a refractive index of the adhesive layer.

Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.

Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.

Abstract: A substrate processing apparatus that simultaneously forms thin films on a plurality of substrates and performs heat treatment includes: a plurality of substrate holders, each including a substrate support that supports a substrate and a first gas pipe having one or a plurality of injection holes; a boat where the plurality of substrate holders are stacked and including a second gas pipe connected with the first gas pipe of each of the substrate holders; a process chamber providing a space in which the substrates stacked in the boat are processed; a conveying unit that carries the boat into/out of the process chamber; a first heating unit disposed outside the process chamber; and a gas supply unit including a third gas pipe connected with the second gas pipe and supplying a heated or cooled gas into the second gas pipe.

Abstract: A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage.

Abstract: A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat.

Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

Abstract: An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.

Abstract: A method for forming a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; forming a metal catalyst on the amorphous silicon layer; forming a gettering metal layer on an overall surface of the amorphous silicon layer where the metal catalyst is formed; and performing a heat treatment. A thin film transistor includes the polycrystalline silicon layer, and an organic light emitting device includes the thin film transistor.

Abstract: A substrate processing apparatus that simultaneously forms thin films on a plurality of substrates and performs heat treatment includes: a plurality of substrate holders, each including a substrate support that supports a substrate and a first gas pipe having one or a plurality of injection holes; a boat where the plurality of substrate holders are stacked and including a second gas pipe connected with the first gas pipe of each of the substrate holders; a process chamber providing a space in which the substrates stacked in the boat are processed; a conveying unit that carries the boat into/out of the process chamber; a first heating unit disposed outside the process chamber; and a gas supply unit including a third gas pipe connected with the second gas pipe and supplying a heated or cooled gas into the second gas pipe.

Abstract: A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.

Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.

Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

Abstract: An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.

Abstract: A sputtering apparatus that is capable of uniformly depositing an ultra-low concentration metal catalyst on a substrate having an amorphous silicon layer in order to crystallize the amorphous silicon layer. The sputtering apparatus includes a process chamber, a metal target located inside the process chamber, a substrate holder located opposite the metal target, and a vacuum pump connected with an exhaust pipe of the process chamber. An area of the metal target is more than 1.3 times an area of a substrate placed on the substrate holder.