Abstract: An example imaging system includes a digital conversion circuit and a plurality of pixel circuits each having a photodiode, a biasing circuit, a charge-to-voltage converter, and a switch. The photodiode is configured to generate charges in response to light or radiation. The biasing circuit includes an operational amplifier having an input signal port for receiving a bias reference signal which controls a bias current flowing through an internal circuit of the operational amplifier. The charge-to-voltage converter is configured to accumulate the charges drained by the biasing circuit and convert the accumulated charges into a corresponding output voltage. The switch configured to selectively couple the charge-to-voltage converter to at least one data line. The digital conversion circuit is configured to generate a digital correlated signal sample for each pixel circuit using a difference between a digital signal sample and a digital reset level sample.

Abstract: An X-ray sensing apparatus includes a first photodiode array for imaging a first area, a second photodiode array for imaging a second area that overlaps a portion of the first area, and a light-blocking layer coupled to the first photodiode array that prevents at least a portion of visible light emitted by a scintillator layer of the X-ray sensing apparatus from reaching the second photodiode array. The light-blocking layer includes a first feature that is imagable by the second photodiode array and indicates a position along a first direction and a second feature that is imagable by the second photodiode array and indicates a position along a second direction that is different than the first direction.

Abstract: An X-ray sensing apparatus includes a first photodiode array for imaging a first area, a second photodiode array for imaging a second area that overlaps a portion of the first area, and a light-blocking layer coupled to the first photodiode array that prevents at least a portion of visible light emitted by a scintillator layer of the X-ray sensing apparatus from reaching the second photodiode array. The light-blocking layer includes a first feature that is imagable by the second photodiode array and indicates a position along a first direction and a second feature that is imagable by the second photodiode array and indicates a position along a second direction that is different than the first direction.

Abstract: An imager includes a flat panel configured to collect charges when the imager operates in a full-power charge integration mode. The imager switches to a low-power standby mode immediately after each image acquisition in the full-power charge integration mode. Bias current flowing through the flat panel is monitored in the standby mode. The imager switches to the full-power charge integration mode when detecting a change in the bias current indicating onset of an X-ray exposure.

Abstract: An imager includes a flat panel configured to collect charges when the imager operates in a full-power charge integration mode. The imager switches to a low-power standby mode immediately after each image acquisition in the full-power charge integration mode. Bias current flowing through the flat panel is monitored in the standby mode. The imager switches to the full-power charge integration mode when detecting a change in the bias current indicating onset of an X-ray exposure.

Abstract: An X-ray assembly may include a housing, an anode, and a cathode assembly. The anode may be located at least partially within the housing. The anode may include a target area configured such that X-rays generated at the target area form an area-source X-ray beam. The cathode assembly may be located at least partially within the housing and may be positioned to deliver electrons to the target area of the anode from multiple directions relative to the target area, the multiple directions including at least two substantially opposite directions relative to the target area.

Abstract: An x-ray imager includes a scintillator layer configured to generate light from x-rays, a detector array configured to detect light generated in the scintillator layer, and a lens array situated between the scintillator layer and the detector array. The lens array may be configured to collect light and focus the collected light to the detector array.

Abstract: An x-ray imaging device include a scintillator layer configured to generate light from x-rays, a TFT detector array at the first surface of the scintillator layer to detect light generated in the scintillator, and a CMOS sensor at the second surface of the scintillator layer to detect light generated in the scintillator.

Abstract: An imaging apparatus includes a plurality of detector pixels. Each detector pixel comprises a detector element configured to generate a first signal in response to x-ray photons incident thereon, a current mirror configured to generate a second signal representative of the first signal, and a switching transistor configured to allow the second signal and/or the first signal to be transferred out from the detector pixel.

Abstract: An imager includes a flat panel configured to collect charges when the imager operates in a full-power charge integration mode. The imager switches to a low-power standby mode immediately after each image acquisition in the full-power charge integration mode. Bias current flowing through the flat panel is monitored in the standby mode. The imager switches to the full-power charge integration mode when detecting a change in the bias current indicating onset of an X-ray exposure.

Abstract: An x-ray imaging device may include a detector array and an x-ray converting layer coupled to the detector array. The detector array and the x-ray converting layer may be configured such that x-rays traverse the detector array before propagating in the x-ray converting layer. The x-ray imaging device may also include a buildup layer behind the x-ray converting layer. The x-ray imaging device may be used as a “universal” imager for both MV and kV imaging.

Abstract: An imaging apparatus includes a plurality of detector pixels. Each detector pixel comprises a detector element configured to generate a first signal in response to x-ray photons incident thereon, a current mirror configured to generate a second signal representative of the first signal, and a switching transistor configured to allow the second signal and/or the first signal to be transferred out from the detector pixel.

Abstract: An x-ray imaging device include a scintillator layer configured to generate light from x-rays, a TFT detector array at the first surface of the scintillator layer to detect light generated in the scintillator, and a CMOS sensor at the second surface of the scintillator layer to detect light generated in the scintillator.

Abstract: An x-ray imaging device may include a detector array and an x-ray converting layer coupled to the detector array. The detector array and the x-ray converting layer may be configured such that x-rays traverse the detector array before propagating in the x-ray converting layer. The x-ray imaging device may also include a buildup layer behind the x-ray converting layer. The x-ray imaging device may be used as a “universal” imager for both MV and kV imaging.

Abstract: An x-ray imager includes a scintillator layer configured to generate light from x-rays, a detector array configured to detect light generated in the scintillator layer, and a lens array situated between the scintillator layer and the detector array. The lens array may be configured to collect light and focus the collected light to the detector array.

Abstract: A method and apparatus for excess signal compensation in an imaging system is described. In one particular embodiment, the invention provides for non-linear background, offset (due to time dependent dark current) and/or lag (including constant, linear and non-linear terms, due to image persistence) corrections of large area, flat panel imaging sensors.

Abstract: A method and apparatus for excess signal compensation in an imaging system is described. In one particular embodiment, the invention provides for non-linear background, offset (due to time dependent dark current) and/or lag (including constant, linear and non-linear terms, due to image persistence) corrections of large area, flat panel imaging sensors.

Abstract: A method and apparatus for excess signal compensation in an imaging system is described. In one particular embodiment, the invention provides for non-linear background, offset (due to time dependent dark current) and/or lag (including constant, linear and non-linear terms, due to image persistence) corrections of large area, flat panel imaging sensors.

Abstract: A method and apparatus for excess signal compensation in an imaging system is described. In one particular embodiment, the invention provides for non-linear background, offset (due to time dependent dark current) and/or lag (including constant, linear and non-linear terms, due to image persistence) corrections of large area, flat panel imaging sensors.

Abstract: A method and apparatus for excess signal compensation in an imaging system is described. In one particular embodiment, the invention provides for non-linear background, offset (due to time dependent dark current) and/or lag (including constant, linear and non-linear terms, due to image persistence) corrections of large area, flat panel imaging sensors.