Abstract: A memory cell having a Josephson junction and a magnetic junction in close proximity. The two junctions may be vertically integrated. The magnetic junction has at least two magnetic layers with different coercive forces and a non-magnetic layer therebetween, to form a spin valve or pseudo-spin valve. A magnetization direction of a magnetic layer with lower coercive force can be rotated with respect to the larger coercive force magnetic layer(s). Magnetic fields produced by appropriately configured control lines carrying electric current, or spin-polarized current through the magnetic junction, can result in rotation. The magnetic junction influences the Josephson critical current of the Josephson junction, leading to distinct values of critical current which can serve as digital logic states. The memory cell can be integrated into large arrays containing a plurality of the cells, to enable the selective READ and WRITE operations.

Abstract: A memory cell having a Josephson junction and a magnetic junction situated in a close proximity to the Josephson junction. The two junctions may be vertically integrated. The magnetic junction has at least two magnetic layers with different coercive forces and a non-magnetic layer therebetween, to form a spin valve or pseudo-spin valve. A magnetization direction of a magnetic layer with lower coercive force can be rotated with respect to the larger coercive force magnetic layer(s). Magnetic fields produced by appropriately configured control lines carrying electric current, or spin-polarized current through the magnetic junction, can result in rotation. The magnetic junction influences the Josephson critical current of the Josephson junction, leading to distinct values of critical current which can serve as digital logic states. The so obtained memory cell can be integrated into the large arrays containing a plurality of the cells, to enable the selective READ and WRITE operations.

Abstract: A multilayer structure with zirconium-oxide tunnel barriers. In one embodiment, the multilayer structure includes a first niobium (Nb) layer, a second niobium (Nb) layer, and a plurality of zirconium-oxide tunnel barriers sandwiched between the first niobium (Nb) layer and the second niobium (Nb) layer, wherein the plurality of zirconium-oxide tunnel barriers is formed with N layers of zirconium-oxide, N being an integer greater than 1, and M layers of zirconium, M being an integer no less than N, such that between any two neighboring layers of zirconium-oxide, a layer of zirconium is sandwiched therebetween.

Abstract: A multilayer structure with zirconium-oxide tunnel barriers. In one embodiment, the multilayer structure includes a first niobium (Nb) layer, a second niobium (Nb) layer, and a plurality of zirconium-oxide tunnel barriers sandwiched between the first niobium (Nb) layer and the second niobium (Nb) layer, wherein the plurality of zirconium-oxide tunnel barriers is formed with N layers of zirconium-oxide, N being an integer greater than 1, and M layers of zirconium, M being an integer no less than N, such that between any two neighboring layers of zirconium-oxide, a layer of zirconium is sandwiched therebetween.