Abstract: A sensor thin film transistor includes a gate electrode, a gate insulation layer formed on the gate electrode, a semiconductor layer having a portion positioned above the gate electrode and on a side of the gate insulation layer opposite the gate electrode, and a source electrode and drain electrode having spaced apart ends positioned on the semiconductor layer, wherein the sensor thin film transistor is operative such that a signal-to-noise ratio is equal to or greater than about 200 when the gate-off voltage applied to the gate electrode is equal to or less than about 0V.

Abstract: A manufacturing method of a display panel for an LCD includes forming a gate line on a flexible insulation substrate, depositing a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer and forming a data line and a drain electrode on the semiconductor layer and the gate insulating layer. The forming the semiconductor layer may be performed by PECVD at about 100° C. to about 180° C., the gate insulating layer may have a thickness of about 2000 ? to about 5500. The method may further include performing hydrogen plasma treatment on the gate insulating layer after the depositing the gate insulating layer and annealing the substrate having the plurality of thin films after the forming the data line and the drain electrode. The insulation substrate may include PES.