Patents by Inventor Ivan OSHCHEPKOV

Ivan OSHCHEPKOV has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra-low temperature ALD to form high-quality Si-containing film
    Patent number: 11482414
    Abstract: Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250° C.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: October 25, 2022
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Naoto Noda, Ivan Oshchepkov, Jean-Marc Girard
  • ULTRA-LOW TEMPERATURE ALD TO FORM HIGH-QUALITY SI-CONTAINING FILM
    Publication number: 20200373148
    Abstract: Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250° C.
    Type: Application
    Filed: December 18, 2019
    Publication date: November 26, 2020
    Inventors: Naoto NODA, Ivan OSHCHEPKOV, Jean-Marc GIRARD
  • VAPOR DISPOSITION OF SILICON-CONTAINING FILMS USING PENTA-SUBSTITUTED DISILANES
    Publication number: 20190027357
    Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
    Type: Application
    Filed: August 21, 2018
    Publication date: January 24, 2019
    Inventors: Jean-Marc Girard, Changhee Ko, Ivan Oshchepkov, Kazutaka Yanagita, Shingo Okubo, Naoto Noda, Julien Gatineau, Yann Martelat
  • VAPOR DEPOSITION OF SILICON-CONTAINING FILMS USING PENTA-SUBSTITUTED DISILANES
    Publication number: 20170186597
    Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
    Type: Application
    Filed: March 15, 2017
    Publication date: June 29, 2017
    Inventors: Jean-Marc GIRARD, Changhee KO, Ivan OSHCHEPKOV, Kazutaka YANAGITA, Shingo OKUBO, Naoto NODA, Julien GATINEAU
  • Vapor deposition of silicon-containing films using penta-substituted disilanes
    Patent number: 9633838
    Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: April 25, 2017
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Jean-Marc Girard, Changhee Ko, Ivan Oshchepkov, Kazutaka Yanagita, Shingo Okubo, Naoto Noda, Julien Gatineau
  • VAPOR DEPOSITION OF SILICON-CONTAINING FILMS USING PENTA-SUBSTITUTED DISILANES
    Publication number: 20160111272
    Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
    Type: Application
    Filed: December 28, 2015
    Publication date: April 21, 2016
    Inventors: Jean-Marc GIRARD, Changhee KO, Ivan OSHCHEPKOV, Kazutaka YANAGITA, Shingo OKUBO, Naoto NODA, Julien GATINEAU