Abstract: An exercise assembly for selectively providing resistance to a user's hand includes an article of apparel that may be worn on a user's hand. A resistance band is operationally coupled to the article of apparel. A handle is operationally coupled to the article of apparel. The handle is coupled to the resistance band. The handle selectively places the resistance band in a resisting position. The resistance band provides resistance to the user's hand.

Abstract: The invention includes methods for precisely and accurately etching layers of wide bandgap semiconductor material. According to one aspect of the invention, the method includes providing a multi-layer laminate including at least a first and second layer of wide bandgap semiconductor material, measuring a first conductance of the first layer of semiconductor material, partially etching the first layer of semiconductor material a first amount, measuring a second conductance of the first layer of semiconductor material etched the first amount, and utilizing the first and second measured conductance to determine a time required to etch the first layer of semiconductor material a second amount.

Abstract: A method and device for making a vial from a pre-form having interior and exterior base portions and an interior and exterior side wall is provided. The device includes a heat source, at least one roller, a mandrel, and a means for forming the exterior base portion of the pre-form. The method for making the vial includes the steps of heating the pre-form to a temperature at or above the lowest temperature at which the pre-form flows, contacting the interior base portion with the mandrel, shaping the exterior side wall of the pre-form with the at least one roller, and forming the finished exterior base portion of the vial with a base forming means when the pre-from is at or above the temperature achieved in the heating step to form the finished vial base.

Abstract: The invention includes methods for precisely and accurately etching layers of wide bandgap semiconductor material. According to one aspect of the invention, the method includes providing a multi-layer laminate including at least a first and second layer of wide bandgap semiconductor material, measuring a first conductance of the first layer of semiconductor material, partially etching the first layer of semiconductor material a first amount, measuring a second conductance of the first layer of semiconductor material etched the first amount, and utilizing the first and second measured conductance to determine a time required to etch the first layer of semiconductor material a second amount.