Patents by Inventor Ivan Petrov Ivanov
Ivan Petrov Ivanov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10479480Abstract: A foldable wing for an aircraft includes a base wing having a base wing end region, a wing tip having a connection region, a first engagement means integrated into the base wing, a second engagement means integrated into the wing tip, and a drive mechanism coupled with the wing tip for moving the wing tip relative to the base wing. The first and second engagement means are adapted for engaging each other along a sliding course from a first position, in which the connection region of the wing tip and the base wing end region are in a flush contact to form a continuous wing, up to a second position, in which the first engagement means and the second engagement means disengage. The drive mechanism includes a first movement element and a second movement element at least partially extending in a spanwise direction, and supported in a linear guide each.Type: GrantFiled: November 16, 2016Date of Patent: November 19, 2019Assignee: Airbus Operations GmbHInventors: Christoph Winkelmann, Wilfried Ellmers, Jan Haserodt, Rico Weber, Ivan Petrov Ivanov
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Publication number: 20170137112Abstract: A foldable wing for an aircraft includes a base wing having a base wing end region, a wing tip having a connection region, a first engagement means integrated into the base wing, a second engagement means integrated into the wing tip, and a drive mechanism coupled with the wing tip for moving the wing tip relative to the base wing. The first and second engagement means are adapted for engaging each other along a sliding course from a first position, in which the connection region of the wing tip and the base wing end region are in a flush contact to form a continuous wing, up to a second position, in which the first engagement means and the second engagement means disengage. The drive mechanism includes a first movement element and a second movement element at least partially extending in a spanwise direction, and supported in a linear guide each.Type: ApplicationFiled: November 16, 2016Publication date: May 18, 2017Applicant: Airbus Operations GmbHInventors: Christoph Winkelmann, Wilfried Ellmers, Jan Haserodt, Rico Weber, Ivan Petrov Ivanov
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Patent number: 8487390Abstract: A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.Type: GrantFiled: April 6, 2009Date of Patent: July 16, 2013Assignee: Seagate Technology LLCInventors: Dimitar V. Dimitrov, Ivan Petrov Ivanov, Shuiyuan Huang, Antoine Khoueir, Brian Lee, John Daniel Stricklin, Olle Gunnar Heinonen, Insik Jin
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Patent number: 8309945Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: GrantFiled: February 15, 2012Date of Patent: November 13, 2012Assignee: Seagate Technology LLCInventors: Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar Velikov Dimitrov
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Patent number: 8288254Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: GrantFiled: February 8, 2012Date of Patent: October 16, 2012Assignee: Seagate Technology LLCInventors: Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar Velikov Dimitrov
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Publication number: 20120142169Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: ApplicationFiled: February 8, 2012Publication date: June 7, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar V. Dimitrov
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Publication number: 20120138884Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: ApplicationFiled: February 15, 2012Publication date: June 7, 2012Applicant: SEAGATE TECHNOLOGY LLC.Inventors: Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar V. Dimitrov
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Patent number: 8193089Abstract: Various embodiments of the present invention are generally directed to a method of forming a conductive via plug in a semiconductor device. A first and second metal layer are electrically connected by a via plug that is formed by depositing a tungsten seed layer on a plurality of metal barrier layers within a recess using atomic layer deposition. The recess is then filled with tungsten using chemical vapor deposition.Type: GrantFiled: July 13, 2009Date of Patent: June 5, 2012Assignee: Seagate Technology LLCInventors: Antoine Khoueir, Yongchul Ahn, Peter Nicholas Manos, Shuiyan Huang, Ivan Petrov Ivanov
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Patent number: 8134138Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: GrantFiled: January 30, 2009Date of Patent: March 13, 2012Assignee: Seagate Technology LLCInventors: Tian Wei, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar Velikov Dimitrov
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Patent number: 8039394Abstract: A method of forming a layer of alpha-tantalum on a substrate including the steps of depositing a layer of titanium nitride on a substrate; and depositing a layer of alpha-tantalum on the layer of titanium nitride, wherein the deposition of the alpha-tantalum is carried out at temperatures below about 300° C.Type: GrantFiled: June 26, 2009Date of Patent: October 18, 2011Assignee: Seagate Technology LLCInventors: Ivan Petrov Ivanov, Wei Tian, Mallika Kamarajugadda, Paul E. Anderson
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Publication number: 20110006436Abstract: Various embodiments of the present invention are generally directed to a method of forming a conductive via plug in a semiconductor device. A first and second metal layer are electrically connected by a via plug that is formed by depositing a tungsten seed layer on a plurality of metal barrier layers within a recess using atomic layer deposition. The recess is then filled with tungsten using chemical vapor deposition.Type: ApplicationFiled: July 13, 2009Publication date: January 13, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Antoine Khoueir, Yongchul Ahn, Peter Nicholas Manos, Shuiyuan Huang, Ivan Petrov Ivanov
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Publication number: 20110005920Abstract: Various embodiments of the present invention are generally directed to an apparatus and method for low temperature physical vapor deposition (PVD) of an amorphous thin film layer of material onto a substrate. A PVD chamber is configured to support a substrate and has a cathode target with a layer of sputtering material thereon, an anode shield, and a magnetron assembly adjacent the target. A high impulse power magnetron sputtering (HiPIMS) power supply is coupled to the PVD chamber, the power supply having a charging circuit and a charge storage device. The power supply applies relatively high energy, low duty cycle pulses to the magnetron assembly to sputter, via self ionizing plasma, relatively low energy ions from the layer of sputtering material to deposit an amorphous thin film layer onto the substrate.Type: ApplicationFiled: July 13, 2009Publication date: January 13, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Ivan Petrov Ivanov, Antoine Khoueir, Wei Tian, Paul E. Anderson, Lili Jia, Yongchul Ahn, Michael Xuefei Tang, Yang Dong
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Publication number: 20100330800Abstract: A method of forming a layer of alpha-tantalum on a substrate including the steps of depositing a layer of titanium nitride on a substrate; and depositing a layer of alpha-tantalum on the layer of titanium nitride, wherein the deposition of the alpha-tantalum is carried out at temperatures below about 300° C.Type: ApplicationFiled: June 26, 2009Publication date: December 30, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Ivan Petrov Ivanov, Wei Tian, Mallika Kamarajugadda, Paul E. Anderson
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Publication number: 20100193758Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: ApplicationFiled: January 30, 2009Publication date: August 5, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar V. Dimitrov
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Publication number: 20100084724Abstract: A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.Type: ApplicationFiled: April 6, 2009Publication date: April 8, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Dimitar V. Dimitrov, Ivan Petrov Ivanov, Shuiyuan Huang, Antoine Khoueir, Brian Lee, John Stricklin, Olle Gunnar Heinonen, Insik Jin
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Patent number: 6638856Abstract: A method for depositing a metal layer on a substrate includes the steps of depositing a first metal layer at a first deposition temperature; depositing a second metal layer on the first metal layer at a second deposition temperature higher than the first deposition temperature; reducing at least one of a growth rate and a temperature of at least the second metal layer; and depositing a third metal layer on the second metal layer. Preferably, the growth rate is reduced substantially to zero and the temperature is reduced to a point below which the second metal layer ceases to flow. By interrupting the processing the metal layer prior to the third metal layer forming step by the reducing and/or cooling step, the formation of whiskers and other similar thermal stress-induced defects is suppressed or inhibited, resulting in a substantially smooth and substantially defect free metal layer.Type: GrantFiled: September 11, 1998Date of Patent: October 28, 2003Assignee: Cypress Semiconductor CorporationInventor: Ivan Petrov Ivanov