Patents by Inventor Ivan Zyulkov

Ivan Zyulkov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate processing apparatus and method
    Patent number: 12169361
    Abstract: A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.
    Type: Grant
    Filed: July 16, 2020
    Date of Patent: December 17, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Ivo Raaijmakers, Daniele Piumi, Ivan Zyulkov, David Kurt de Roest, Michael Eugene Givens
  • METHOD FOR MAKING METAL TRIMETHYLENEMETHANE-CARBONYL COMPLEXES
    Publication number: 20240352054
    Abstract: The Invention relates to a simple two-step method of making highly pure compounds of formula 1a with n being 1 or 2 and M being ruthenium or molybdenum and R being a linear or branched alkyl with 1 to 8 carbon atoms or a cyclic alkyl group with 3 to 9 carbon atoms from starting materials readily available.
    Type: Application
    Filed: August 17, 2022
    Publication date: October 24, 2024
    Applicant: UMICORE AG & CO. KG
    Inventors: Arne GLÜER, Wolf SCHORN, Annika FREY, Ralf KARCH, Nicholas RAU, Ivan ZYULKOV
  • Methods and related systems for depositing EUV sensitive films
    Publication number: 20240201596
    Abstract: Methods and related systems for forming an EUV sensitive film on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first deposition pulse and a second deposition pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises a metal precursor. The second precursor pulse comprises exposing the substrate to a second precursor. The second precursor comprises a heterocyclic organic compound.
    Type: Application
    Filed: December 4, 2023
    Publication date: June 20, 2024
    Inventors: Kishan Ashokbhai Patel, Yoann Tomczak, Charles Dezelah, Ivan Zyulkov, David Kurt De Roest, Michael Givens, Daniele Piumi
  • METHOD OF FORMING A PHOTORESIST UNDERLAYER AND STRUCTURE INCLUDING SAME
    Publication number: 20230420256
    Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.
    Type: Application
    Filed: August 21, 2023
    Publication date: December 28, 2023
    Inventors: Ivan Zyulkov, David Kurt de Roest, Yoann Tomczak, Michael Eugene Givens, Perttu Sippola, Tatiana Ivanova, Zecheng Liu, Bokheon Kim, Daniele Piumi
  • Method of forming a photoresist underlayer and structure including same
    Patent number: 11735422
    Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.
    Type: Grant
    Filed: October 8, 2020
    Date of Patent: August 22, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Ivan Zyulkov, David Kurt de Roest, Yoann Tomczak, Michael Eugene Givens, Perttu Sippola, Tatiana Ivanova, Zecheng Liu, Bokheon Kim, Daniele Piumi
  • METHOD OF FORMING A PHOTORESIST ABSORBER LAYER AND STRUCTURE INCLUDING SAME
    Publication number: 20230091094
    Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (??) of greater than 2×106 cm2/mol.
    Type: Application
    Filed: August 31, 2022
    Publication date: March 23, 2023
    Inventors: Hannu Huotari, Daniele Piumi, Yoann Tomczak, Ivan Zyulkov, Charles Dezelah, Arpita Saha, David de Roest, Jerome Innocent, Michael Givens, Monica Thukkaram
  • METHOD OF FORMING PATTERNED STRUCTURES
    Publication number: 20230059464
    Abstract: Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include gas-phase formation of a layer comprising an oxalate compound on a surface of the substrate. Portions of the layer comprising the oxalate compound can be exposed to radiation or active species that form exposed and unexposed portions. Material can be selectively deposed onto the exposed or the unexposed portions.
    Type: Application
    Filed: August 8, 2022
    Publication date: February 23, 2023
    Inventors: Yoann Tomczak, Ivan Zyulkov, David Kurt de Roest, Michael Eugence Givens, Daniele Piumi, Charles Dezelah
  • METHOD OF TREATING A SUBSTRATE
    Publication number: 20220216059
    Abstract: Methods and related systems for lithographically defining patterns on a substrate are disclosed. An exemplary method includes forming a structure. The method includes providing a substrate to a reaction chamber. The substrate comprises a semiconductor and a surface layer. The surface layer comprises amorphous carbon. The method further comprises forming a barrier layer on the surface layer and depositing a metal-containing layer on the substrate. The metal- containing layer comprises oxygen and a metal.
    Type: Application
    Filed: January 4, 2022
    Publication date: July 7, 2022
    Inventors: Zecheng Liu, Takashi Yoshida, Ryu Nakano, Ivan Zyulkov, Yiting Sun, Yoann Francis Tomczak, David de Roest
  • METHOD OF FORMING A PHOTORESIST UNDERLAYER AND STRUCTURE INCLUDING SAME
    Publication number: 20210111025
    Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.
    Type: Application
    Filed: October 8, 2020
    Publication date: April 15, 2021
    Inventors: Ivan Zyulkov, David Kurt de Roest, Yoann Tomczak, Michael Eugene Givens, Perttu Sippola, Tatiana Ivanova, Zecheng Liu, Bokheon Kim, Daniele Piumi
  • SUBSTRATE PROCESSING APPARATUS AND METHOD
    Publication number: 20210033977
    Abstract: A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.
    Type: Application
    Filed: July 16, 2020
    Publication date: February 4, 2021
    Inventors: Ivo Raaijmakers, Daniele Piumi, Ivan Zyulkov, David Kurt de Roest, Michael Eugene Givens
  • Method of patterning target layer
    Patent number: 10672655
    Abstract: The disclosed technology generally relates to patterning structures in semiconductor fabrication, and more particularly to patterning structures using mask structures having bridged lines.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: June 2, 2020
    Assignees: IMEC vzw, Katholieke Universiteit Leuven
    Inventors: Basoene Briggs, Ivan Zyulkov, Katia Devriendt
  • METHOD OF PATTERNING TARGET LAYER
    Publication number: 20180330986
    Abstract: The disclosed technology generally relates to patterning structures in semiconductor fabrication, and more particularly to patterning structures using mask structures having bridged lines.
    Type: Application
    Filed: May 9, 2018
    Publication date: November 15, 2018
    Inventors: Basoene Briggs, Ivan Zyulkov, Katia Devriendt