Patents by Inventor Ivar Hamberg

Ivar Hamberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of and apparatus for plastic optical-chip encapsulation
    Publication number: 20040156149
    Abstract: An opto-mechanical interface apparatus includes an optical hybrid, an electronic hybrid adapted to receive electronic components, an adapter fixture for fixing the electronic hybrid and the optical hybrid to one another to form a combined hybrid, a lower-capsule part, and an upper-capsule part adapted to mate with the lower-capsule part. Mating of the upper-capsule part and the lower-capsule part encloses at least part of the combined hybrid. The apparatus forms an opto-mechanical interface for making external optical connection(s).
    Type: Application
    Filed: August 25, 2003
    Publication date: August 12, 2004
    Inventors: Odd Steijer, Ivar Hamberg, Paul Eriksen, Ulf Holm, Jan-Ake Engstrand, Hans-Christer Moll, Jan-Erik Falk, Torbjorn Palm, Annika Solehav
  • Method and device relating to semiconductor components
    Patent number: 6300173
    Abstract: A conductor 1 crossing a trench around an electrical component 1 is electrically connected to an isolated intermediate conducting region in order to move the field strength concentrations out of the electrical component and into the intermediate conducting region. This prevents avalanche breakdown occurring in the electrical component.
    Type: Grant
    Filed: January 22, 1999
    Date of Patent: October 9, 2001
    Assignee: Telefonaktiebolaget LM Ericsson (publ)
    Inventors: Anders Söderbärg, Nils Ögren, Håkan Sjödin, Ivar Hamberg
  • Bipolar transistor with polysilicon dummy emitter
    Patent number: 6153919
    Abstract: A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before the masks are applied. This makes the fitting of the masks less critical, as they only have to be fitted within the area of the polysilicon layer. In this way an accuracy of 0.1 .mu.m or better can be achieved.
    Type: Grant
    Filed: January 26, 1999
    Date of Patent: November 28, 2000
    Assignee: Telefonaktiebolaget LM Ericsson
    Inventors: H.ang.kan Sjodin, Anders Soderbarg, Nils Ogren, Ivar Hamberg, Dimitri Olofsson, Karin Andersson
  • Method relating to the manufacture of a semiconductor component
    Patent number: 6140194
    Abstract: A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before masks are applied. This makes the positioning of masks less critical because they only have to be positioned within the area of the polysilicon layer. In this way, an accuracy of 0.1 .mu.m or better can be achieved.
    Type: Grant
    Filed: March 3, 1998
    Date of Patent: October 31, 2000
    Assignee: Telefonaktiebolaget LM Ericsson (publ)
    Inventors: H.ang.kan Sjodin, Anders Soderbarg, Nils Ogren, Ivar Hamberg, Dimitri Olofsson, Karin Andersson
  • Semiconductor device provided with conductor electrically connected to conducting region
    Patent number: 6121668
    Abstract: A conductor crossing a trench around an electrical component is electrically connected to an isolated intermediate conducting region in order to move the field strength concentrations out of the electrical component and into the intermediate conducting region. This prevents avalanche breakdown from occurring in the electrical component.
    Type: Grant
    Filed: March 23, 1998
    Date of Patent: September 19, 2000
    Assignee: Telefonaktiebolaget LM Ericsson
    Inventors: Anders Soderbarg, Nils Ogren, H.ang.kan Sjodin, Ivar Hamberg
  • Layout for radio frequency power transistors
    Patent number: 5488252
    Abstract: A layout is provided for RF power transistors that reduces common lead inductance and its associated performance penalties. An RF transistor cell is rotated 90.degree. with respect to a conventional RF transistor cell so as to located bond pads nearer the edge of a silicon die, reducing bond wire length and common lead inductance and thereby improving performance at high frequencies. The placement of bond pad and distribution of different parts of the transistor layout further reduces common lead inductance.
    Type: Grant
    Filed: August 16, 1994
    Date of Patent: January 30, 1996
    Assignee: Telefonaktiebolaget L M Erricsson
    Inventors: Ted Johansson, Larry Leighton, Ivar Hamberg