Abstract: The invention relates to an optoelectronic semiconductor device comprising a carrier, an optoelectronic semiconductor chip arranged on the carrier and a plurality of columns, wherein the plurality of columns are arranged on a base surface of the carrier opposite to the optoelectronic semiconductor chip, and wherein the plurality of columns cause a thermal heat conduction away from the optoelectronic semiconductor chip and the carrier. The invention further relates to a method for producing an optoelectronic semiconductor device.

Abstract: In an embodiment an optoelectronic component includes a semiconductor chip having an electrical contact, the semiconductor chip configured to emit primary electromagnetic radiation, a carrier having an electrically conductive coating on which the semiconductor chip with the electrical contact is arranged, a contact agent connecting the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip with one another and a passivation layer arranged in places on the electrically conductive coating, wherein an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact agent, wherein the passivation layer has a penetration, wherein the contact agent protrudes beyond the penetration in a lateral direction, and wherein the semiconductor chip is a flip chip.

Abstract: A method for producing a conversion element comprising the following steps is described: providing a conversion layer having a matrix, in which phosphor particles are brought in, the phosphor particles comprising a host lattice having activator ions and being concentrated in a enrichment zone, providing a compensation layer having the matrix, in which compensation particles are brought in, which comprise the host lattice and are concentrated in a enrichment zone, and joining the conversion layer and the compensation layer in such a way that the enrichment zone of the conversion layer and the enrichment zone of the compensation layer are arranged symmetrically to one another with respect to a symmetry plane of the conversion element. A conversion element and a component are also specified.

Abstract: An optoelectronic semiconductor component may include a semiconductor layer stack configured to generate electromagnetic radiation. The semiconductor layer stack may be arranged over a substrate and structured to form a mesa, so that the semiconductor layer stack is not present in an edge region of the substrate. The component may include a converter element on a side of the semiconductor layer stack that is remote from the substrate. The component may further include a gold layer over the edge region of the substrate in an arrangement plane between the substrate and the semiconductor layer stack.

Abstract: A radiation emitting semiconductor chip may include a first semiconductor layer sequence, a second semiconductor layer sequence arranged on the first semiconductor layer sequence, a first contact structure configured to inject charge carriers into the first semiconductor layer sequence, and a contact layer sequence configured to inject charge carriers into the second semiconductor layer sequence. The first contact structure and the contact layer sequence may be formed without overlapping in lateral directions in plan view. The contact layer sequence may have a sheet resistance, which increases in the direction of the first contact structure.

Abstract: An optoelectronic component may include a semiconductor chip configured to emit radiation and a reflection element disposed in the beam path of the semiconductor chip where the reflection element is configured to reflect radiation. The reflection element may include a matrix material having diffuser particles and filler particles embedded therein. The diffuser particles are different from the filler particles. The filler particles may include a matrix having scatter particles embedded therein and/or a ceramic comprising the scatter particles in sintered form.

Abstract: An optoelectronic component is specified comprising a semiconductor body comprising a first semiconductor layer sequence and a second semiconductor layer sequence which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence has a first active region, which generates electromagnetic primary radiation with a first peak wavelength the second semiconductor layer sequence comprises a second active region, which has a section configured to partially absorb electromagnetic primary radiation and to re-emit electromagnetic secondary radiation having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.

Abstract: The invention relates to an optoelectronic component, which, in at least one embodiment, comprises an optoelectronic semiconductor chip having an emission side and a conversion element on the emission side. The conversion element is configured for conversion of a primary beam emitted by the semiconductor chip in operation as intended. The conversion element is divided into at least one first layer and one second layer. The first layer is arranged between the second layer and the emission side. The first layer comprises a first matrix material having fluorescent particles introduced therein. The second layer comprises a second matrix material having fluorescent particles introduced therein. The first matrix material of the first layer has a higher index of refraction than the second matrix material of the second layer.

Abstract: A radiation emitting semiconductor chip may be configured to emit electromagnetic radiation from a radiation exit surface during operation. The chip may include a carrier on which a first epitaxial semiconductor layer sequence of a first conductivity type and a second epitaxial semiconductor layer sequence of a second conductivity type different from the first conductivity type are arranged, a first current spreading layer arranged between the first semiconductor layer sequence and the carrier, a second current spreading layer arranged between the first current spreading layer and the carrier, a dielectric layer arranged in regions between the first current spreading layer and the second current spreading layer, a reflective layer arranged between the second current spreading layer and the carrier, and an electrically insulating layer arranged in regions between the second current spreading layer and the reflective layer.

Abstract: An optoelectronic semiconductor chip may include a semiconductor body having an upper side and flanks running transversely to the upper side which delimit the semiconductor body in a lateral direction. The flanks are each covered with a first passivation layer. In the region of the flanks in each case a second passivation layer may be arranged between the first passivation layer and the semiconductor body, the index of refraction of the second passivation layer being lower than the index of refraction of the first passivation layer. The indices of refraction may be understood to be the indices of refraction for the radiation generated by the active layer during operation.

Abstract: A method for producing a conversion element comprising the following steps is described: providing a conversion layer having a matrix, in which phosphor particles are brought in, the phosphor particles comprising a host lattice having activator ions and being concentrated in a enrichment zone, providing a compensation layer having the matrix, in which compensation particles are brought in, which comprise the host lattice and are concentrated in a enrichment zone, and joining the conversion layer and the compensation layer in such a way that the enrichment zone of the conversion layer and the enrichment zone of the compensation layer are arranged symmetrically to one another with respect to a symmetry plane of the conversion element conversion element and a component are also specified.

Abstract: An optoelectronic component (1) is specified comprising a semiconductor body (2) comprising a first semiconductor layer sequence (3) and a second semiconductor layer sequence (7) which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence (3) has a first active region (4), which generates electromagnetic primary radiation (26) with a first peak wavelength the second semiconductor layer sequence (7) comprises a second active region (9), which has a section configured to partially absorb electromagnetic primary radiation (26) and to re-emit electromagnetic secondary radiation (27) having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.

Abstract: An optoelectronic semiconductor component may include a semiconductor chip that emits radiation of a first wavelength range from a radiation exit area and a conversion layer that has a plurality of single conversion layers. Each conversion layer may have a phosphor that converts the radiation from a first wavelength range to a second wavelength range. Each conversion layer may also have a concentration of the phosphor in the individual conversion layers different from one another.

Abstract: In an embodiment an optoelectronic component includes a semiconductor chip having an electrical contact, the semiconductor chip configured to emit primary electromagnetic radiation, a carrier having an electrically conductive coating on which the semiconductor chip with the electrical contact is arranged, a contact agent connecting the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip with one another and a passivation layer arranged in places on the electrically conductive coating, wherein an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact agent, wherein the passivation layer has a penetration, wherein the contact agent protrudes beyond the penetration in a lateral direction, and wherein the semiconductor chip is a flip chip.

Abstract: An optoelectronic device including a passivation layer and a method for manufacturing an optoelectronic device are disclosed. In an embodiment an optoelectronic device includes an optoelectronic semiconductor chip comprising optoelectronic semiconductor layers configured to generate electromagnetic radiation, the optoelectronic semiconductor layers having a first semiconductor layer from which the generated electromagnetic radiation is configured to be coupled out and a passivation layer in direct contact with a first main surface of the first semiconductor layer, wherein the passivation layer includes quantum dot particles configured to convert a wavelength of the electromagnetic radiation, wherein the passivation layer has a refractive index larger than 1.6, and wherein a surface of the passivation layer remote from the first semiconductor layer forms a first main surface of the optoelectronic device.

Abstract: The invention relates to an optoelectronic component, which, in at least one embodiment, comprises an optoelectronic semiconductor chip having an emission side and a conversion element on the emission side. The conversion element is configured for conversion of a primary beam emitted by the semiconductor chip in operation as intended. The conversion element is divided into at least one first layer and one second layer. The first layer is arranged between the second layer and the emission side. The first layer comprises a first matrix material having fluorescent particles introduced therein. The second layer comprises a second matrix material having fluorescent particles introduced therein. The first matrix material of the first layer has a higher index of refraction than the second matrix material of the second layer.

Abstract: The invention relates to a luminophore mixture which comprises at least one quantum dot luminophore and at least one functional material, the functional material is formed such that it scatters electromagnetic radiation and/or has a high density.

Abstract: An electronic component is specified, with a first contact point for n-side contacting, a second contact point for p-side contacting, and a protective diode, which is connected antiparallel to the first contact point and to the second contact point, wherein the protective diode comprises a first diode structure which is p-conductive, the protective diode comprises a second diode structure which is n-conductive, the first diode structure is formed as a layer which overlaps in places with the first contact point in a first overlap region, the second diode structure is formed as a layer which overlaps in places with the second contact point in a second overlap region, and the first diode structure and the second diode structure overlap each other in a third overlap region.

Abstract: An optoelectronic component may include a semiconductor chip configured to emit radiation and a reflection element disposed in the beam path of the semiconductor chip where the reflection element is configured to reflect radiation. The reflection element may include a matrix material having diffuser particles and filler particles embedded therein. The diffuser particles are different from the filler particles. The filler particles may include a matrix having scatter particles embedded therein and/or a ceramic comprising the scatter particles in sintered form.

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a carrier having a pedestal with a support surface, applying a liquid joining material with filler particles to the support surface of the pedestal and applying a radiation emitting semiconductor chip with a mounting surface, which is larger than the support surface of the pedestal to the liquid joining material such that the joining material forms a joining layer between the support surface of the pedestal and the mounting surface of the semiconductor chip and the joining material at least partially fills only a recess, which is limited by a part of the mounting surface projecting beyond the support surface.