Abstract: Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.

Abstract: Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.

Abstract: A non-arcing atmospheric pressure plasma processing reactor that includes a wafer platform that is electrically conductive and operatively placed near at least one radio frequency electrode to allow the creation of an electric field. An rf power supply is electrically attached to both the radio frequency electrode and the wafer platform to create said electric field for generation of said non-arcing atmospheric pressure plasma. A process gas supply comprising a mixture of 90% to 99% support gas to 1 % to 10% reactive gas is supplied to the electric field to generate the atmospheric pressure plasma.

Abstract: Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.

Abstract: The present invention enables the production of stable, steady state, non-thermal atmospheric pressure rf capacitive ?-mode plasmas using gases other than helium and neon. In particular, the current invention generates and maintains stable, steady-state, non-thermal atmospheric pressure rf ?-mode plasmas using pure argon or argon with reactive gas mixtures, pure oxygen or air. By replacing rare and expensive helium with more readily available gases, this invention makes it more economical to use atmospheric pressure rf ?-mode plasmas for various materials processing applications.

Abstract: An atmospheric pressure plasma etching reactor, in one embodiment, has a table holding a wafer to be processed and which moves the wafer to be processed under at least one electrode that is mounted in close proximity to the table and defines an entry of a gas mixture, and in another embodiment, has interleaved radio frequency powered electrodes and grounded electrodes. Electrodes may have grooves having preselected widths to enhance the plasma for treatment of the wafers. With a radio-frequency voltage connected between the electrodes, and a gas mixture between the electrode and the wafer, a plasma is created between the electrode and the wafer to be processed, resulting in surface treatment, film removal or ashing of the wafer.

Abstract: Apparatus and method for cleaning substrates. A substrate is held and rotated by a chuck and an atmospheric pressure plasma jet places a plasma onto predetermined areas of the substrate. Subsequently liquid rinse is sprayed onto the predetermined areas. In one embodiment, a nozzle sprays a gas onto the predetermined areas to assist in drying the predetermined areas when needed.

Abstract: Apparatus and method for cleaning substrates. A substrate is held and rotated by a chuck and an atmospheric pressure plasma jet places a plasma onto predetermined areas of the substrate. Subsequently liquid rinse is sprayed onto the predetermined areas. In one embodiment, a nozzle sprays a gas onto the predetermined areas to assist in drying the predetermined areas when needed.

Abstract: An atmospheric pressure plasma etching reactor has a table holding a wafer to be processed and which moves the wafer to be processed under at least one electrode that is mounted in close proximity to the table and defines an entry of a gas mixture. With a radio-frequency voltage connected between the table and the at least one electrode, a plasma is created between the at least one electrode and the wafer to be processed processing the wafer to be processed as it is moved under the at least one electrode by the table.

Abstract: Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250° C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A “jet” of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode.