Abstract: The present invention provides apparatus for loading a substrate (65) onto a processing surface (61) in a thin-film processing chamber (60). The apparatus includes a support (66) which cooperates with one or more corresponding apertures (62) in the processing surface so as to be movable between an extended position in which the support can support a substrate (65) above the processing surface (61), and a retracted position in which the support is flush with or located below the processing surface (61). The support has a number of limbs (64) which extend radially outwardly from a central hub, at an angle relative to the processing surface. The limbs contact the edges of different sized substrates in use so as to support the substrate in a support plane above the central hub and substantially parallel to the processing surface.

Abstract: A method for the purpose of producing a stencil mask, which comprises a sheet having structures in the form of orifices, wherein the method comprises the following sequence of steps:a) selecting a planar, two-dimensional substrate consisting of a specific material comprising a thickness greater than 50 .mu.m,b) producing a thin layer, the so-called intermediate layer on the upper side of the substrate,c) structuring this intermediate layer by means of a lithographic process with the structures for the mask which is to be produced,d) etching the lower side of the substrate at least in the region of the structures provided for the mask orifices, until the substrate comprises in this region a predetermined membrane thickness less than 50 .mu.m,e) etching the upper side of the membrane using the structured intermediate layer as a masking layer, in order to form in this membrane the orifices of the mask which orifices correspond to the structures of the intermediate layer, andf) removing the intermediate layer.

Abstract: In order to process a carbon film carbon is deposited on a substrate by sputtering from a carbon sputter target in a gas mixture which contains nitrogen in a minimum proportion of 20% and a sputter gas at a predetermined gas pressure and the substrate is then subjected under a high vacuum to thermal treatment at a temperature above 100.degree. C. The carbon films produced in this manner comprise a fiber and/or tube structure which extends substantially perpendicular to the film.

Abstract: A silicon membrane for use as a micromechanical sensor or as a mask for projection lithography is fabricated by doping a silicon wafer to different thicknesses at different portions and then electrochemically etching away the undoped portion of the wafer.