Patents by Inventor Ivo Bernhard Pouwel

Ivo Bernhard Pouwel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7521768
    Abstract: The LDMOS transistor (99) of the invention is provided with a stepped shield structure (50) and/or with a first (25) and a second (26) drain extension region having a higher dopant concentration than the second drain extension region, and being covered by the shield.
    Type: Grant
    Filed: August 24, 2004
    Date of Patent: April 21, 2009
    Assignee: NXP B.V.
    Inventors: Stephan Jo Cecile Henri Theeuwen, Freerk Van Rijs, Petra Christina Anna Hammes, Ivo Bernhard Pouwel, Hendrikus Ferdinand Franciscus Jos