Abstract: A measuring cell for recording an electrical potential of an analyte situated on the measuring cell. The measuring cell has a sensor, a layer arranged above the sensor and electrically insulating the analyte from the sensor, and an amplifier circuit connected to the sensor on a substrate and having an input stage containing a field-effect transistor or a bipolar transistor, the sensor being at least indirectly connected to a control terminal of the field-effect transistor or of the bipolar transistor. An operating point of the amplifier circuit is set by means of a voltage or a current applied at the control terminal of the field-effect transistor or of the bipolar transistor of the input stage of the amplifier circuit.

Abstract: Method and device for the exposure-dependent noise correction in images sensor which can be addressed in lines and columns are converted into digital values and an offset voltage correction is carried out by a summer, a gain correction is carried out by a multiplier, and an exposure-dependent dark current correction is carried out by a further summer. Further, the coefficients that depend on the line number, the column number and the integration time, are determined by linear approximations. As a result, the fixed pattern noise (PFN) in CMOS image sensor can be efficiently suppressed with a relatively low outlay.

Abstract: A measuring cell for recording an electrical potential of an analyte situated on the measuring cell. The measuring cell has a sensor, a layer arranged above the sensor and electrically insulating the analyte from the sensor, and an amplifier circuit connected to the sensor on a substrate and having an input stage containing a field-effect transistor or a bipolar transistor, the sensor being at least indirectly connected to a control terminal of the field-effect transistor or of the bipolar transistor. An operating point of the amplifier circuit is set by means of a voltage or a current applied at the control terminal of the field-effect transistor or of the bipolar transistor of the input stage of the amplifier circuit.

Abstract: Defective pixels of an image sensor are corrected by the device having an interpolator, a defect column memory, and a switch that changing the output signal under the control of the defect column memory. Depending on a defect signal from the defect column memory, input pixel data are output as output pixel data in a defect-free case and pixel data interpolated from adjacent pixel data are output as output pixel data in a defect case. The defect signal is generated from an image line address and an image column address such that a pointer memory is addressed by the image line address, wherein the pointer memory contains a pointer for each of at least some of the image lines, the pointer addressing a defect column memory with column numbers stored therein of defective image columns. The column number is read from the defect column memory, the column number is compared with the column address, and the defect signal is formed from the comparison.