Abstract: The present invention discloses a stepper lithography apparatus, its lithography pattern alignment device and operating method. Several three-dimensional marks are set on the wafer as coordinate presets for positioning the wafer surface, and the three-dimensional marks are measured by the sensing technology using probe sensors to obtain coordinates of the wafer surface with sub-nanometer accuracy, the wafer stage is then moved and the new coordinates of the three-dimensional mark are measured and compared with the same three-dimensional nano-coordinates before the wafer stage is moved to obtain the error value of the wafer area position coordinates. This coordinate error is compensated by moving the relative position of the exposure beam generator and the wafer area using the closed-loop control principle to achieve accurate re-alignment of the relative coordinate positions.

Abstract: Active cantilever probes having a thin coating incorporated into their design are disclosed. The probes can be operated in opaque and/or chemically harsh environments without the need of a light source or optical system and without being significantly negatively impacted by corrosion. The probes include a substrate that has a cantilever, a thermomechanical actuator associated with the cantilever, a piezoresistive stress sensor disposed on the cantilever, and a thin coating disposed on the cantilever and the piezoresistive stress sensor. The coating is bonded to the substrate, is thermally conductive, and has a low thermal resistance. Further, the thin coating is configured to have little to no impact on one or more of a mass of the active probe, a residual stress of the cantilever, or a stiffness of the active probe. Techniques for performing topography and making other measurements in an opaque and/or chemically harsh environment are also provided.

Abstract: The present invention is related to a substrate (10) for a controlled implantation of ions (80) into a bulk (20), the substrate (10) comprising the bulk (20) composed of a crystalline first material (70), the bulk (20) comprising an implantation region (28) and a surface (22), wherein the implantation region (28) is located within the bulk (20) and along an implantation direction (82) at an implantation depth (26) below an implantation area (24) on the surface (10) of the bulk (20).

Abstract: The invention discloses a sub-nanoscale high-precision lithography writing field stitching method. A photosensitive resist layer is coated on the surface of the wafer to be exposed; after the surface of the photosensitive resist layer is exposed, the exposed pattern will generate a tiny concave-convex structure; the concave-convex structure patterns are identified with a nano contact sensor and can be used as in-situ alignment coordinate markers; by comparing the position coordinates of the writing field before and after exposure and wafer moving, the deviations of stitching can be calculated, and an high-precision lithography stitching of the wafer is performed in a negative feedback control mode, so that the disadvantages of the existing non-in-situ, far-from-writing field and the poor performance of stitching precision in blind type open-loop lithography technology due to the influence of mechanical motion precision of a wafer workbench and long-time drift of an electron beam are overcome.

Abstract: Active cantilever probes having a thin coating incorporated into their design are disclosed. The probes can be operated in opaque and/or chemically harsh environments without the need of a light source or optical system and without being significantly negatively impacted by corrosion. The probes include a substrate that has a cantilever, a thermomechanical actuator associated with the cantilever, a piezoresistive stress sensor disposed on the cantilever, and a thin coating disposed on the cantilever and the piezoresistive stress sensor. The coating is bonded to the substrate, is thermally conductive, and has a low thermal resistance. Further, the thin coating is configured to have little to no impact on one or more of a mass of the active probe, a residual stress of the cantilever, or a stiffness of the active probe. Techniques for performing topography and making other measurements in an opaque and/or chemically harsh environment are also provided.

Abstract: The present invention is related to a substrate (10) for a controlled implantation of ions (80) into a bulk (20), the substrate (10) comprising the bulk (20) composed of a crystalline first material (70), the bulk (20) comprising an implantation region (28) and a surface (22), wherein the implantation region (28) is located within the bulk (20) and along an implantation direction (82) at an implantation depth (26) below an implantation area (24) on the surface (10) of the bulk (20).

Abstract: A method for aligning a first article relative to a second article. The second article is provided with at least one flexible structure fixed to the second article at one point while the first article includes at least one surface relief marking. A detector measures the interaction between the flexible structure and surface relief marking and generates detector signals relative to that interaction to achieve alignment between the first and second articles.

Abstract: A neutron generator includes a conductive substrate comprising a plurality of conductive nanostructures with free-standing tips and a source of an atomic species to introduce the atomic species in proximity to the free-standing tips. A target placed apart from the substrate is voltage biased relative to the substrate to ionize and accelerate the ionized atomic species toward the target. The target includes an element capable of a nuclear fusion reaction with the ionized atomic species to produce a one or more neutrons as a reaction by-product.

Abstract: A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced.

Abstract: A method for forming a through via in a semiconductor element includes providing a semiconductor element having electronic circuitry integrated on the main side thereof. The semiconductor element further includes an etch stop layer and a conductive region, wherein the conductive region is arranged between the etch stop layer and the main side of the semiconductor element. The method also includes selectively etching a through via from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the etch stop layer and removing at least partly the etch stop layer, so that the conductive region is exposed to the backside and filling at least partly the through via with a conductive material, wherein the conductive material is electrically isolated from the semiconductor element.

Abstract: A neutron generator includes a conductive substrate comprising a plurality of conductive nanostructures with free-standing tips and a source of an atomic species to introduce the atomic species in proximity to the free-standing tips. A target placed apart from the substrate is voltage biased relative to the substrate to ionize and accelerate the ionized atomic species toward the target. The target includes an element capable of a nuclear fusion reaction with the ionized atomic species to produce a one or more neutrons as a reaction by-product.

Abstract: A method for forming a through via in a semiconductor element includes providing a semiconductor element having electronic circuitry integrated on the main side thereof. The semiconductor element further includes an etch stop layer and a conductive region, wherein the conductive region is arranged between the etch stop layer and the main side of the semiconductor element. The method also includes selectively etching a through via from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the etch stop layer and removing at least partly the etch stop layer, so that the conductive region is exposed to the backside and filling at least partly the through via with a conductive material, wherein the conductive material is electrically isolated from the semiconductor element.

Abstract: A microsystem component with a device (3) deformable under the influence of temperature changes is disclosed. The device comprises at least one first (4, 5) and second (8) element with differing thermal expansion coefficients and different thermal conductivities. The elements (4, 5; 8) are physically separate and arranged and connected to each other such that the device (3) assumes flexure states which are dependent on the temperature.

Abstract: A method and apparatus is described for aligning a first article relative to a second article, for example for aligning a nanoimprint template with a semiconductor wafer. The method comprises the steps of: providing said second article with at least one flexible structure fixed relative thereto at least one point, providing a first article having at least one surface relief marking thereon, providing a detector for measuring an interaction of the flexible structure with the surface relief marking and generating detector signals relating to said interaction, identifying with the help of the detector signals the position of the flexible structure and thus of the second article with respect to the surface relief marking and generating relative movement between the first and second articles to achieve a desired alignment between the first and second articles defined by the surface relief marking. In this method and apparatus the flexible structure is brought into contact with the surface relief marking.

Abstract: A method and apparatus is described for aligning a first article relative to a second article, for example for aligning a nanoimprint template with a semiconductor wafer. The method comprises the steps of: providing said second article with at least one flexible structure fixed relative thereto at least one point, providing a first article having at least one surface relief marking thereon, providing a detector for measuring an interaction of the flexible structure with the surface relief marking and generating detector signals relating to said interaction, identifying with the help of the detector signals the position of the flexible structure and thus of the second article with respect to the surface relief marking and generating relative movement between the first and second articles to achieve a desired alignment between the first and second articles defined by the surface relief marking. In this method and apparatus the flexible structure is brought into contact with the surface relief marking.

Abstract: A microsystem component with a device (3) deformable under the influence of temperature changes is disclosed. The device comprises at least one first (4, 5) and second (8) element with differing thermal expansion coefficients and different thermal conductivities. The elements (4, 5; 8) are physically separate and arranged and connected to each other such that the device (3) assumes flexure states which are dependent on the temperature.

Abstract: A method and apparatus is described for aligning a first article relative to a second article, for example for aligning a nanoimprint template with a semiconductor wafer. The method comprises the steps of: providing said second article with at least one flexible structure fixed relative thereto at least one point, providing a first article having at least one surface relief marking thereon, providing a detector for measuring an interaction of the flexible structure with the surface relief marking and generating detector signals relating to said interaction, identifying with the help of the detector signals the position of the flexible structure and thus of the second article with respect to the surface relief marking and generating relative movement between the first and second articles to achieve a desired alignment between the first and second articles defined by the surface relief marking. In this method and apparatus the flexible structure is brought into contact with the surface relief marking.

Abstract: The disclosed device is directed towards a shadow mask for ion beams comprising a silicon wafer with a hole pattern arranged therein, wherein the silicon wafer is provided at a side confronting the incident ion beams with a metallic coating which stops the ion beams and dissipates heat, wherein an apertured region of the silicon wafer has a thickness from about 20 ?m to about 200 ?m and apertures in the shadow mask have lateral dimensions from about 0.5 ?m to about 3 ?m.

Abstract: A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced.

Abstract: The invention relates to a device and a method for maskless microlithography. Several microstructured cantilevers (2) are arranged in an array (26) and an actuator is integrated in each of the cantilevers (2) of the array (26). A power supply and control unit (24) is provided, said unit adjusting the distance of the cantilevers (6) relative to a surface (4) that is to be structured by means of an appropriate voltage. Every point of the needles (6) is connected to said power supply and control unit (24). In order to implement the inventive method, an array (26) with cantilevers, each of which carries a point of a needle (6), is brought into contact with a surface (4) to be structured in such a way that the points of the needles (6) are arranged close to the surface (4) to be structured.