Patents by Inventor Ivoyl Koutsaroff

Ivoyl Koutsaroff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9305709
    Abstract: In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: April 5, 2016
    Assignee: BlackBerry Limited
    Inventors: Ivoyl Koutsaroff, Mark Vandermeulen, Andrew Cervin-Lawry, Atin J. Patel
  • Patent number: 9218907
    Abstract: A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3? anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3??)?-(ABO3????N?)1??. A represents a divalent element, B represents a tetravalent element, ? satisfies 0.005???1.0, 1?? satisfies 0.05?1???0.9, and 1?? is an area ratio between the regions containing rich N3? anions and the matrix of remaining oxide perovskite material.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: December 22, 2015
    Assignee: Murata Manufacturing Co., Ltd
    Inventors: Ivoyl Koutsaroff, Shinichi Higai, Akira Ando
  • Publication number: 20150228408
    Abstract: A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3? anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3??)?-(ABO3????N?)1??. A represents a divalent element, B represents a tetravalent element, ? satisfies 0.005???1.0, 1?? satisfies 0.05?1???0.9, and 1?? is an area ratio between the regions containing rich N3? anions and the matrix of remaining oxide perovskite material.
    Type: Application
    Filed: August 26, 2014
    Publication date: August 13, 2015
    Inventors: Ivoyl KOUTSAROFF, Shinichi HIGAI, Akira ANDO
  • Publication number: 20150093497
    Abstract: In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
    Type: Application
    Filed: October 6, 2014
    Publication date: April 2, 2015
    Inventors: Ivoyl Koutsaroff, Mark Vandermeulen, Andrew Cervin-Lawry, Atin J. Patel
  • Patent number: 8848336
    Abstract: A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3? anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3-?)?-(ABO3-?-?N?)1-?. A represents a divalent element, B represents a tetravalent element, ? satisfies 0.005???1.0, 1-? satisfies 0.05?1-??0.9, and 1-? is an area ratio between the regions containing rich N3? anions and the matrix of remaining oxide perovskite material.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: September 30, 2014
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Ivoyl Koutsaroff, Shinichi Higai, Akira Ando
  • Publication number: 20130003254
    Abstract: A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3? anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3-?)?-(ABO3-?-?N?)1-?. A represents a divalent element, B represents a tetravalent element, ? satisfies 0.005???1.0, 1-? satisfies 0.05?1-??0.9, and 1-? is an area ratio between the regions containing rich N3? anions and the matrix of remaining oxide perovskite material.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 3, 2013
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventors: Ivoyl KOUTSAROFF, Shinichi HIGAI, Akira ANDO
  • Publication number: 20080037200
    Abstract: In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
    Type: Application
    Filed: April 13, 2007
    Publication date: February 14, 2008
    Inventors: Ivoyl Koutsaroff, Mark Vandermeulen, Andrew Cervin-Lawry, Atin Patel
  • Publication number: 20070209201
    Abstract: In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
    Type: Application
    Filed: April 17, 2007
    Publication date: September 13, 2007
    Inventors: Ivoyl Koutsaroff, Mark Vandermeulen, Andrew Cervin-Lawry, Atin Patel
  • Publication number: 20060274476
    Abstract: In accordance with the teachings described herein, low loss thin film capacitors and methods of manufacturing the same are provided. A low loss thin-film capacitor structure may include first and second electrodes and a polar dielectric between the first and second electrodes. The polar dielectric and the first and second electrodes collectively form a capacitor having an operational frequency band. The capacitor structure may also include one or more layers that affect the acoustic properties of the thin-film capacitor structure such that the capacitor absorbs RF energy at a frequency that is outside of the operational frequency band. A method of manufacturing a low loss thin-film capacitor may include the steps of fabricating a capacitor structure that includes a polar dielectric material, and modifying the acoustic properties of the capacitor structure such that the polar capacitor absorbs RF energy at a frequency that is outside of the operating frequency band of the capacitor structure.
    Type: Application
    Filed: April 3, 2006
    Publication date: December 7, 2006
    Inventors: Andrew Cervin-Lawry, Mircea Capanu, Ivoyl Koutsaroff, Marina Zelner, Thomas Bernacki
  • Publication number: 20050117272
    Abstract: In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
    Type: Application
    Filed: November 24, 2004
    Publication date: June 2, 2005
    Inventors: Ivoyl Koutsaroff, Mark Vandermeulen, Andrew Cervin-Lawry, Atin Patel