Patents by Inventor Iwao Higashinakagawa

Iwao Higashinakagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same
    Patent number: 4746803
    Abstract: In an apparatus for forming a single crystal semiconductor layer from a non-single-crystalline semiconductor material by scanning a region of the material with an electron beam, a first pair of deflection electrodes and a second pair of deflection electrodes, both pairs being provided in the path of the electron beam. A deflection signal generated by modifying the amplitude of a high-frequency fundamental wave signal with a modulation wave signal having a frequency lower than that of the high-frequency fundamental wave signal is supplied to the deflection electrodes of the first pair. The electrodes rapidly deflect the electron beam in a first direction, while changing the range of deflecting the beam, thereby forming a locus of the beam spot on the sample. Simultaneously, the deflection electrodes of the second pair deflect the beam in a second direction, thereby annealing a region of the material, to form a single crystal semiconductor layer.
    Type: Grant
    Filed: September 8, 1986
    Date of Patent: May 24, 1988
    Assignee: Agency of Industrial Science and Technology
    Inventors: Tomoyasu Inoue, Hiroyuki Tango, Kyoichi Suguro, Iwao Higashinakagawa, Toshihiko Hamasaki
  • Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam
    Patent number: 4662949
    Abstract: In an apparatus for forming a single crystal semiconductor layer from a non-single-crystalline semiconductor material by scanning a region of the material with an electron beam, a first pair of deflection electrodes and a second pair of deflection electrodes, both pairs being provided in the path of the electron beam. A deflection signal generated by modifying the amplitude of a high-frequency fundamental wave signal with a modulation wave signal having a frequency lower than that of the high-frequency fundamental wave signal is supplied to the deflection electrodes of the first pair. The electrodes rapidly deflect the electron beam in a first direction, while changing the range of deflecting the beam, thereby forming a locus of the beam spot on the sample. Simultaneously, the deflection electrodes of the second pair deflect the beam in a second direction, thereby annealing a region of the material, to form a single crystal semiconductor layer.
    Type: Grant
    Filed: August 5, 1985
    Date of Patent: May 5, 1987
    Assignee: Director-General of Agency of Industrial Science and Technology
    Inventors: Tomoyasu Inoue, Hiroyuki Tango, Kyoichi Suguro, Iwao Higashinakagawa, Toshihiko Hamasaki
  • Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode
    Patent number: 4283439
    Abstract: A method of manufacturing a semiconductor device comprises the steps of forming an interconnection electrode made of a refractory metal or a silicide of the metal on an insulating film formed on a semiconductor substrate with necessary elements already formed, forming a silicon nitride film on the interconnection electrode, and forming a silicon oxide film on the silicon nitride film, thereby preventing the elements from being deteriorated.
    Type: Grant
    Filed: April 29, 1980
    Date of Patent: August 11, 1981
    Assignee: VLSI Technology Research Association
    Inventors: Iwao Higashinakagawa, Syohei Sima, Takahiko Moriya