Abstract: A sample is irradiated with terahertz light from a light source, so that an image (G1) is generated by capturing an image of a region (R1) including a point (S) of the sample, and an image (G2) is generated by capturing an image of a region (R2) including the point (S) and separated from the region (R1) by a distance (L). A single image (V) is generated by applying a predetermined binary operation to the images (G1) and (G2).

Abstract: In order to generate a two-dimensional image of a sample in a short time using THz waves, provided is a reflective imaging device including a sample holder, a THz wave light source, a THz wave camera, a rotation mechanism for rotating the holder and the camera, and a processing unit. A sample unit includes an incidence member, a sample, and a reflection member. The sample includes a first region of only a membrane and a second region including a biopolymer. The camera detects, with regard to respective incident angles, a THz wave in which interference occurs between a component reflected at an interface between the incidence member and the sample and a component reflected at an interface between the sample and the reflection member, of each portion of the sample unit, and outputs a signal.

Abstract: A sample is irradiated with terahertz light from a light source, so that an image (G1) is generated by capturing an image of a region (R1) including a point (S) of the sample, and an image (G2) is generated by capturing an image of a region (R2) including the point (S) and separated from the region (R1) by a distance (L). A single image (V) is generated by applying a predetermined binary operation to the images (G1) and (G2).

Abstract: In order to generate a two-dimensional image of a sample in a short time using THz waves, provided is a reflective imaging device including a sample holder, a THz wave light source, a THz wave camera, a rotation mechanism for rotating the holder and the camera, and a processing unit. A sample unit includes an incidence member, a sample, and a reflection member. The sample includes a first region of only a membrane and a second region including a biopolymer. The camera detects, with regard to respective incident angles, a THz wave in which interference occurs between a component reflected at an interface between the incidence member and the sample and a component reflected at an interface between the sample and the reflection member, of each portion of the sample unit, and outputs a signal.

Abstract: An absorption spectroscopy apparatus provides an apparatus for analyzing gaseous sample. A measuring section irradiates the gaseous sample with terahertz radiation. An analysis section calculates a concentration of a specific constituent based on a level of absorbance by the gaseous sample. Terahertz radiation at least contains frequency components where the specific constituent shows an absorbance larger than an absorbance by a background constituent. Terahertz radiation at least contains frequency components where a spectrum of absorbance by the background constituent shows relatively flat profile.

Abstract: In a micro-bridge structure in which a temperature detecting portion 14 (diaphragm) including a bolometer thin film 7 is supported by a supporting portion 13 in a state floated from a circuit substrate 2, a reflective film 3 reflecting a THz wave is formed on the circuit substrate 2, an absorbing film 11 absorbing the THz wave is formed on the temperature detecting portion 14, and an optical resonance structure is formed by the reflective film 3 and the temperature detecting portion 14. And a gap between the reflective film 3 and the temperature detecting portion 14 is set approximately ¼ of a wavelength of an infrared ray on the basis of the wavelength of the infrared ray (in a range of approximately 1.5 to 2.5 ?m, for example), and a sheet resistance of the temperature detecting portion 14 is set in a range in which an absorptance of the THz wave becomes a predetermined value or above on the basis of the THz wave (in a range of approximately 10 to 100 ?/sq.).

Abstract: In a bolometer-type THz-wave detector 1 in a micro-bridge structure in which a temperature detecting portion 14 (diaphragm) including a bolometer thin film 7 is supported by a supporting portion 13 in a state suspended from a circuit substrate, a member (dielectric cover 11) made of a dielectric material for efficiently collecting a THz wave is added to an upper part of the temperature detecting portion 14, and when a refractive index of the dielectric cover 11 is n, thickness is t, and a wavelength of the THz wave is ?, a setting is made so as to have at >?, and a gap between the dielectric cover 11 and the temperature detecting portion 14 is set at integral multiples of ?/2. By this arrangement, an absorptance of the THz wave can be improved using a structure and manufacturing method of a bolometer-type infrared detector, and a high-performance bolometer-type THz-wave detector can be manufactured with a high yield.

Abstract: In a micro-bridge structure in which a temperature detecting portion (diaphragm) including a bolometer thin film is supported by a supporting portion in a state floated from a circuit substrate, a reflective film reflecting a THz wave is formed on the circuit substrate, an absorbing film absorbing the THz wave is formed on the temperature detecting portion, and an optical resonance structure is formed by the reflective film and temperature detecting portion. A gap between the reflective film and temperature detecting portion measures approximately ¼ infrared wavelength (e.g., 1.5 to 2.5 ?m). Sheet resistance of the temperature detecting portion is set in a range in which an absorptance of the THz wave becomes a predetermined value or above on the basis of the THz wave (approximately 10-100 ?/sq.). The absorptance of the THz wave is drastically improved while using the structure and manufacturing technique of a bolometer-type infrared detector.

Abstract: In a bolometer-type THz-wave detector in a micro-bridge structure in which a temperature detecting portion (diaphragm) including a bolometer thin film is supported by a supporting portion in a state suspended from a circuit substrate, a member (dielectric cover) made of a dielectric material for efficiently collecting a THz wave is added to an upper part of the temperature detecting portion, and when a refractive index of the dielectric cover is n, thickness is t, and a wavelength of the THz wave is ?, a setting is made so as to have nt>?, and a gap between the dielectric cover and the temperature detecting portion is set at integral multiples of ?/2. By this arrangement, an absorption of the THz wave can be improved using a structure and manufacturing method of a bolometer-type infrared detector, and a high-performance bolometer-type THz-wave detector can be manufactured with a high yield.

Abstract: A quantum cascade laser is provided that is constituted as a superlattice device configured by repeatedly overlaying AlSb or GaAlSb layers and GaSb layers and forming electrode layers at the opposite ends thereof, wherein the thickness of the GaSb layers constituting quantum wells for performing stimulated emission of light is defined so that the energy difference formed between the ground state and the first excited state in the GaSb layers becomes the LO phonon energy of GaSb. The quantum cascade laser lases at lower frequency than conventionally and has a structure that is easy to fabricate.