Abstract: The semiconductor device 100 includes: a semiconductor substrate 102; a capacitor 116 formed on the semiconductor substrate 102, including a structure composed of a lower electrode 118, a capacitive film 120 and an upper electrode 122, which are stacked in this sequence; an extracting unit 124 of the upper electrode 122 of the capacitor 116; and a contact 108c formed below the extracting unit 124, and providing an electrical coupling between the extracting unit 124 and an underlying interconnect such as an impurity-diffused region 103 and the like.

Abstract: A semiconductor device having two or more types of separation oxide film are formed on the substrate of the semiconductor device by different methods so as to correspond with element types formed on the same semiconductor substrate. The method for producing the semiconductor device comprises a first separation oxide film formation process, and a second separation oxide film formation process. In the first separation oxide film formation process, a first mask layer is formed on the semiconductor substrate, the first mask layer of the element separation region of the logic element is selectively removed and the semiconductor substrate in the region area selectively oxidized. In second separation oxide film formation process, the remaining first mask layer is removed, a second mask layer is formed, the second mask layer of the element separation region of DRAM elements is then selectively removed, and the semiconductor substrate of the region is selectively oxidized.

Abstract: A semiconductor device having two or more types of separation oxide film are formed on the substrate of the semiconductor device by different methods so as to correspond with element types formed on the same semiconductor substrate. The method for producing the semiconductor device comprises a first separation oxide film formation process, and a second separation oxide film formation process. In the first separation oxide film formation process, a first mask layer is formed on the semiconductor substrate, the first mask layer of the element separation region of the logic element is selectively removed and the semiconductor substrate in the region area selectively oxidized. In second separation oxide film formation process, the remaining first mask layer is removed, a second mask layer is formed, the second mask layer of the element separation region of DRAM elements is then selectively removed, and the semiconductor substrate of the region is selectively oxidized.