Abstract: The laser diode is based on Al In Ga N alloy and consists of: a bottom cladding layer of n-type conductivity, a bottom waveguide layer of n-type conductivity, a light emitting layer, an electron blocking layer of p-type conductivity, an upper waveguide layer of p-type conductivity, an upper cladding layer of p-type conductivity and a subcontact layer, doped with acceptors with concentration level above 1020 cm?3. The diode characterizes in that its bottom cladding layer (1) of n-type is made of GaOxN1-x alloy in which x>0.0005. A method of fabricated such laser diode in epitaxial growth of a layer structure consisting of at least a bottom cladding layer of n-type conductivity comprising at least one GaOxN1-x layer (1, 1a, 1c) in which x>0.0005, consisting in that the GaOxN1-x layer (1a, 1c) is fabricated using a high pressure method of nitride solution in gallium at pressure higher than 800 MPa.

Abstract: The laser diode comprising crystalline substrate (1) where set of subsequent n-type layers, set of optically active layers (5) and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (2), bottom n-type cladding layer (3) and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer (7) and p-type contact layer (8). The electron blocking layer comprises Inx, AlyGa1-x-y, N alloy doped with magnesium where 1?x>0.001 a 1?y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (2, 3, 4), set of optically active layers (5) and set of p-type layers (6, 7, 8) where the p-type waveguide layer (6) and p-type contact layer (7) is deposited with presence of indium in plasma assisted molecular beam epitaxy method.

Abstract: This method of removal of irregularities and highly defected regions of the surface of crystals and epitaxial layers of GaN and Ga1−x−yAlxInyN characterized by mechano-chemical polishing on the soft polishing pad under pressure in presence of chemical etching agent of water solution of bases of the total concentration above 0.01N in time longer than 10 seconds after which the agent is replaced by the pure water without interruption of the polishing and polishing by at least 1 minute aid subsequent diminution of the load and stopping of the machine and then the polished GaN crystal or GaAlInN epitaxial layer is removed of the polishing machine and dried in the stream of dry nitrogen.

Abstract: The subject of the Invention is the method of fabrication of nitride semiconductor A3B5 such as GaN, AlN, InN or their solid solutions, characterized by p- or n-type conductivity, high intensity of emitted light and high structural quality. The semiconductors obtained by this method are applied in the construction of light emitting devices, light detectors and electric current amplifiers such as for example: highly efficient blue and green light diodes, laser diodes and high power lasers, ultraviolet detectors and high temperature field transistors.

Abstract: The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals: calcium, beryllium or in the concentration of 0.01-10 at. %, at the temperature 1300-1700° C., under the nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by the temperature gradient not higher than 10° C./cm.

Abstract: A process for fabricating a multilayer crystalline structure of nitrides of metals from group III of periodic table including GaN, AlN and InN is provided. The process includes the steps of heating a group III metal (26) to a temperature T1 under an equilibrium nitrogen pressure while maintaining group III metal nitride stability to form a first crystal layer of the group III metal nitride. Thereafter the method includes the step of forming a second crystal layer (28) of the group III metal nitride by decreasing the nitrogen pressure such that the second crystal layer grows on the first layer with a growth rate slower than the growth rate of the first layer at a temperature T2 not greater than temperature T1. The second layer (28) grows on at least a portion of the first layer at a predetermined thickness under the new nitrogen pressure.