Abstract: A repositionable brace helps support the legs of a swap body freight container parked at a truck loading dock. The brace can move from a retracted position to an engaged position. In the engaged position, one end of the brace is at least partially fixed relative to the dock with an opposite end engaging at least one of the container's four legs. In the retracted position, the brace is positioned to where it is more out of the way when not in use, or positioned to align the brace to legs at other various locations. In some cases, the brace pivots between the locked and retracted positions manually, hydraulically, electro-mechanically or pneumatically. Also, a firm landing pad can be associated with the brace to provide a more consistent, level height at which the swap body is parked.

Abstract: An information processing system comprises a sub-circuits, each performing a part of the processing of the information or data. The operation of the sub-circuits is synchronized by means of clock signals applied to clock inputs of the sub-circuits. The clock signals are derived from a system clock and are transferred to each sub-circuit via the sub-circuit or sub-circuits preceding that sub-circuit in the data processing chain. To avoid deterioration of the clock pulses while they are transferred between the sub-circuits, clock regeneration circuitry is arranged in the chain of sub-circuits. The clock regeneration circuitry is preferably integrated together with the data-processing sub-circuits.

Abstract: A semiconductor device including a field effect transistor, such as an insulated gate field effect transistor, which has in the direction from source zone to drain zone successive first and second channel zones with associated gate electrode parts. According to the invention, over at least 80% of the overall channel width, in a direction at right angles to the direction of source-drain current, the ratio L.sub.1 /L.sub.2 between the length L.sub.1 of the first gate electrode part and the length L.sub.2 of the second gate electrode part is variable and smaller than unity in order to improve the linearity of the field effect transistor.

Abstract: A semiconductor device comprising a field effect transistor of the lateral or vertical DMOST type having a source zone of the one conductivity type, an adjoining channel region of the other conductivity type, a drain zone of the one conductivity type and a weakly doped drift region located between the drain zone and the channel region. According to the invention a second gate electrode located on the side of the drain zone and separated from the first gate electrode is disposed on the insulating layer above the channel zone behind the first gate electrode located on the side of the source zone. The length L.sub.2 of the part of the second gate electrode located above the channel zone is at least equal to that of the part of the first gate electrode located above the channel zone. As a result, a high value of the mutual conductance g.sub.m as well as good linearity can be obtained.