Abstract: An avalanche photodiode with a wide dynamic range. An avalanche photodiode with a wide dynamic range is used in fiber-optic communication applications where optical signals of varying powers may be received. The avalanche photodiode includes a field control layer. A doping thickness product can be configured to determine a dynamic range of the avalanche photodiode. The gain of the avalanche photodiode is controllable by adjusting a bias voltage across the avalanche photodiode.

Abstract: An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.

Abstract: A method and apparatus for monitoring MEMS-based optical switches and cross-connects. A plurality of partial reflectors are introduced into optical paths of the switch for reflecting light transmitted along the optical paths through a transparent substrate of the switch, without disturbing transmission of the light along the optical paths. The reflected light is transmitted through the substrate, which is preferably made of silicon and transparent to wavelengths of light used in DWDM systems. A photodetector array bonded to the underside of the substrate detects the light reflected by the plurality of partial reflectors through the substrate. The light detected by the photodetector array indicates the switching states and functionality of the switch, and can be processed by circuitry associated with the array.

Abstract: An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.

Abstract: An apparatus for use in wave division multiplexing optical telecommunication systems includes a dual photodiode array which converts parallel and perpendicularly polarized light beams at given wavelengths to electrical signals which are digitized and used to rapidly and simultaneously determine all wavelengths and associated components of power and angle of polarization. This information can be displayed for monitoring purposes, or can be used to control signals travelling through optical fiber.

Abstract: An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.

Abstract: An apparatus for use in wave division multiplexing optical telecommunication systems includes a dual photodiode array which converts parallel and perpendicularly polarized light beams at given wavelengths to electrical signals which are digitized and used to rapidly and simultaneously determine all wavelengths and associated components of power and angle of polarization. This information can be displayed for monitoring purposes, or can be used to control signals travelling through optical fiber.

Abstract: An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.