Abstract: A static-random-access memory (SRAM) cell has been devised which contains an access transistor having a first channel region with a first surface that lies along a first crystal plane; and a trench driver transistor having a second channel region with a second surface that lies along a second crystal plane. The first and second crystal planes belong to a single family of equivalent crystal planes, for example, the {100} family of planes. Orienting the surfaces of the channel regions of the two transistors in this fashion improves the beta ratio of the driver and access transistors and thus greatly improves the cell stability. The .beta. ratio is the ratio of the transconductances of the driver and access MOSFETs, or ##EQU1## and preferably has a value of at least three. Using a trench driver transistor improves the bit cell capacitance.