Abstract: A semiconductor device includes a first polysilicon structure, wherein the first polysilicon structure has a first grain size. The semiconductor device further includes a first barrier layer over the first polysilicon structure, wherein the first barrier layer has a non-uniform thickness. The semiconductor device includes a second polysilicon structure over the first barrier layer, wherein the second polysilicon structure has a second grain size different from the first grain size.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first polysilicon structure over the substrate, wherein the first polysilicon structure has a first grain size. The semiconductor device further includes a first barrier layer over the first polysilicon structure, wherein the first barrier layer has a non-uniform thickness. The semiconductor device further includes a second polysilicon structure over the first barrier layer, wherein the second polysilicon structure has a second grain size smaller than the first grain size.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first polysilicon structure over the substrate, wherein the first polysilicon structure has a first grain size. The semiconductor device further includes a first barrier layer over the first polysilicon structure, wherein the first barrier layer has a non-uniform thickness. The semiconductor device further includes a second polysilicon structure over the first barrier layer, wherein the second polysilicon structure has a second grain size smaller than the first grain size.

Abstract: A method of making a semiconductor device includes depositing a first polysilicon layer over a substrate. The method further includes forming a barrier layer over the first polysilicon layer. The method further includes patterning the first polysilicon layer. The method further includes depositing a second polysilicon layer over the barrier layer, wherein the depositing of the second polysilicon layer includes increasing a grain size of the first polysilicon layer, and causing at least one grain boundary in the first polysilicon layer to contact the barrier layer.

Abstract: A method of making a semiconductor device includes depositing a first polysilicon layer over a substrate. The method further includes forming a barrier layer over the first polysilicon layer. The method further includes patterning the first polysilicon layer. The method further includes depositing a second polysilicon layer over the barrier layer, wherein the depositing of the second polysilicon layer comprises increasing a grain size of the first polysilicon layer, and causing at least one grain boundary in the first polysilicon layer to contact the barrier layer.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first polysilicon structure over the substrate. The first polysilicon structure has a first grain size. The semiconductor device further includes a first barrier layer over the first polysilicon structure. At least one grain boundary of the first polysilicon structure contacts the first barrier layer. The semiconductor device further includes a second polysilicon structure over the first barrier layer. The second polysilicon layer has a second grain size smaller than the first grain size.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first polysilicon structure over the substrate. The first polysilicon structure has a first grain size. The semiconductor device further includes a first barrier layer over the first polysilicon structure. At least one grain boundary of the first polysilicon structure contacts the first barrier layer. The semiconductor device further includes a second polysilicon structure over the first barrier layer. The second polysilicon layer has a second grain size smaller than the first grain size.

Abstract: An RF connector comprising a coaxial transmission structure that transmits RF power at RF and microwave frequencies through a dielectric seal. Portions of the connector on either side of the seal do not make metal to metal contact. The connector has input and output connector portions having outer conductors coaxially disposed around inner conductors with dielectric material disposed therebetween. Impedance matching transition portions abut each side of the dielectric seal that have a relatively large diameter adjacent the dielectric seal that transitions to a relatively small diameter distal from the dielectric seal. Tapered and stepped impedance matching transition portions may be employed. A shunt capacitance is disposed approximately one quarter wavelength from each side of the dielectric seal in the stepped transition version. RF energy transmitted by way of the input connector portion is capacitively coupled through the dielectric seal to the output connector portion.

Abstract: Fiber optic delay lines in the form of a modified corporate feed having progressive phase delays and a corporate feed having equal phase delays are used to couple RF modulated light signals to detecting, mixing, amplifying and radiating devices of an active array radar. Different RF signals may be sent over the same fiber delay lines using different light colors (or wavelengths) so that the RF modulated signals in the fiber delay lines do not interact with each other. The RF signals can be put on and taken out of the fiber lines using wavelength division multiplexers, for example. This provides an array with a single optical manifold that allows simultaneous full aperture operation at multiple frequencies and/or beams over a wide operating frequency range.

Abstract: A compact high gain VHF antenna for airborne synthetic aperture radar to detect targets concealed behind trees and forests. The antenna is formed by cutting a slotline in the middle of the top wall of a very thin waveguide along its axis. The waveguide can be folded and mounted on the underside of the wings of an aircraft with minimum protrusion and wing drag. The antenna produces a downward and side-looking beam with horizontal polarization for maximum foliage penetration and target detection. The antenna design can be scaled to any frequency for ground based and shipboard applications.

Abstract: An omnidirectional antenna structure that includes oppositely facing, parallel first and second planar dipole arrays (11, 12), each dipole array including side by side substantially identically shaped planar dipole elements (110) having expanded shape dipole wings (51c, 52c). Also disclosed is a sectorial coverage antenna that includes a single planar array of side by side substantially identically shaped planar dipole elements having expanded shape dipole wings.

Abstract: An optical heterodyne system provides the radiation source and beam scan control of a millimeter wave (MMW) array antenna. The heterodyne system is an optical feed system to produce the MMW by mixing the optical outputs from two lasers, distribute the signal source to an array of radiating elements through a Rotman lens and optical fibers, generate the differential phase shift for beam scan in the optical domain, change the beam direction by switching the input laser being used to illuminate the Rotman lens or by varying the frequency of one of the laser sources. The feed system includes a plurality n-1 lasers spaced along the transmit side of the lens, and a center laser disposed on the center axis of the transmit side. A l:n switch receives a command input to determine which of the n-1 lasers will operate. The beat frequency between the center laser operating frequency and that of the n-1 lasers is the MMW frequency.

Abstract: The invention relates to a spark plug (1) comprising at least two insulated electrodes (5) and (6), an earthed electrode (7) and a chamber (4) so arranged with respect to one another that when a voltage is applied arcs are struck in series between electrodes (7) and (6) and (6) and (5) to provide a continuous plasma jet expelled from the chamber (4) at low energies (<100 mJ) and which can be used for combustion of a lean air/fuel mixture.