Patents by Inventor J. J. Quinlivan

J. J. Quinlivan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for improved plasma nitridation of ultra thin gate dielectrics
    Publication number: 20020130377
    Abstract: A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.
    Type: Application
    Filed: March 15, 2001
    Publication date: September 19, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Mukesh V. Khare, Christopher P. D'Emic, Thomas T. Hwang, Paul C. Jamison, J. J. Quinlivan, Beth A. Ward