Patents by Inventor J. J. Wang

J. J. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7810396
    Abstract: A test device for an electronic product includes a vertical pressing pole having a pushing end. The test device also includes a movable platform with a sticking point, wherein upward movement of the movable platform moves the vertical pressing pole upwards by the sticking point. The vertical pressing pole passes through a balance weight which rests on the sticking point. A pressurized platform bears pressure from the pushing end, when the pushing end is pushed onto the pressurized platform. A load-bearing platform supports the pressurized platform and the electronic product located below the pressurized platform. The product is pressed between the pressurized platform and the load-bearing platform due to the pressure from the pushing end lying on the pressurized platform. When the movable platform is further moved downwards after the pushing end is on the pressurized platform, the sticking point bearing the balance weight is separate from the movable platform.
    Type: Grant
    Filed: December 8, 2008
    Date of Patent: October 12, 2010
    Assignee: Inventec Appliances Corp.
    Inventors: J. J. Wang, Li-Min Sun
  • Patent number: 6132688
    Abstract: A method and apparatus for treating exhaust gas from a semiconductor fabrication machine by utilizing a dual-stage apparatus are disclosed. The dual-stage apparatus utilizes a first stage treatment of a condensation unit for removing high boiling temperature contents in the exhaust gas and a second stage treatment in fluid communication with the first stage treatment of an absorption unit for removing low boiling temperature contents in the exhaust gas or contents that were not previously removed in the first stage treatment. The condensation unit can be operated efficiently at a temperature range between about 5.degree. C. and about 15.degree. C., while the partially-treated exhaust gas exiting the condensation unit can be pre-heated to a temperature between about 20.degree. C. and about 40.degree. C. prior to entering the absorption unit for removal of the low boiling temperature contents.
    Type: Grant
    Filed: May 6, 1998
    Date of Patent: October 17, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: J. S. Hsiue, B. H. Yang, T. J. Fang, J. J. Wang, W. C. Lee, T. D. Chang, C. S. Chung, W. F. Chuang