Patents by Inventor J. Lamar Nix

J. Lamar Nix has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5734531
    Abstract: Disclosed is an MR head, and the method of making the same, which has a pole/shield. In the preferred embodiment, the pole side of the pole/shield is constructed such that it has a length that is approximately equal to the length of the pole, and a shield side that is approximately the length of a shield. Through this construction, the MR element, which is disposed between the shield side and the shield, is fully shielded during a read operation. Additionally, the flux lines generated during a write operation approximate the length of the pole so that excessive fringing does not occur. As a result of the smaller flux lines generated between the pole and the pole side of the pole/shield, data may be more densely packed on the disk used in conjunction with the MR head.
    Type: Grant
    Filed: October 31, 1995
    Date of Patent: March 31, 1998
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: J. Lamar Nix, Robert E. Weinstein
  • Patent number: 5637235
    Abstract: A magnetoresistive transducer and method for manufacturing the same includes a spin valve structure comprising a pinned, bottom ferromagnetic layer and an active, top ferromagnetic layer separated by a thin nonmagnetic metal spacer layer. The active ferromagnetic layer and underlying spacer layer are formed into a mesa structure having tapered opposing sides to promote better surface planarization in a thin film fabrication process. A pair of permanent magnet layer portions may be deposited at the end portions of the spin valve structure in a generally coplanar relationship to promote domain stabilization but may also be separated therefrom by a relatively thin separation layer. The magnetic read track width of the device can be accurately and reproducibly determined by photolithographically defining the spacing between the permanent magnet layer portions overlying the active ferromagnetic layer.
    Type: Grant
    Filed: June 17, 1996
    Date of Patent: June 10, 1997
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: Young K. Kim, J. Lamar Nix
  • Patent number: 5608593
    Abstract: A magnetoresistive transducer and method for manufacturing the same includes a spin valve structure comprising a pinned, bottom ferromagnetic layer and an active, top ferromagnetic layer separated by a thin nonmagnetic metal spacer layer. The active ferromagnetic layer and underlying spacer layer are formed into a mesa structure having tapered opposing sides to promote better surface planarization in a thin film fabrication process. A pair of permanent magnet layer portions may be deposited at the end portions of the spin valve structure in a generally coplanar relationship to promote domain stabilization but may also be separated therefrom by a relatively thin separation layer. The magnetic read track width of the device can be accurately and reproducibly determined by photolithographically defining the spacing between the permanent magnet layer portions overlying the active ferromagnetic layer.
    Type: Grant
    Filed: March 9, 1995
    Date of Patent: March 4, 1997
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: Young K. Kim, J. Lamar Nix
  • Patent number: 5573809
    Abstract: A soft adjacent layer biased magnetoresistive ("MR") device, and a method for producing the same, which incorporates a natural flux closure design utilizing coplanar thin film permanent magnets to stabilize the device while obviating induced domain walls in the magnetoresistive and soft adjacent layers ("SAL"). The device structure includes an SAL film and overlying magnetic spacer layer ("MSL") in conjunction with an MR film to produce an SAL biased magnetoresistive structure ("MRS") with the MR layer patterned to a shortened length with respect to the SAL and MSL layers. A non-magnetic metal or dielectric separation layer of on the order of 20-300 angstroms (".ANG.") is then deposited over the MSL layer and the sides of the MR layer followed by the deposition of permanent magnet layer portions substantially coplanar with the MR layer to produce a low energy equilibria device with high sensitivity and superior signal output.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: November 12, 1996
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: J. Lamar Nix, Guy F. Ruse
  • Patent number: 5532892
    Abstract: A soft adjacent layer biased magnetoresistive ("MR") device, and a method for producing the same, which incorporates a natural flux closure design utilizing coplanar thin film permanent magnets to stabilize the device while obviating induced domain walls in the magnetoresistive and soft adjacent layers ("SAL"). The device structure includes an SAL film and overlying magnetic spacer layer ("MSL") in conjunction with an MR film to produce an SAL biased magnetoresistive structure ("MRS") with the MR layer patterned to a shortened length with respect to the SAL and MSL layers. A non-magnetic metal or dielectric separation layer of on the order of 20-300 angstroms (".ANG.") is then deposited over the MSL layer and the sides of the MR layer followed by the deposition of permanent magnet layer portions substantially coplanar with the MR layer to produce a low energy equilibria device with high sensitivity and superior signal output.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: July 2, 1996
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: J. Lamar Nix, Guy F. Ruse