Abstract: The present disclosure provides systems and methods for characterizing the interaction of free radicals with various materials and the use of known interactions to isolate free radical generation from free radical interaction with a target molecule.

Abstract: This disclosure provides methods, systems, and compositions of matter for studying solvent accessibility and three-dimensional structure of biological molecules. A plasma can be used to generate marker radicals, which can interact with a biological molecule and mark the solvent-accessible portions of the biological molecule.

Abstract: The present disclosure provides systems and methods for characterizing the interaction of free radicals with various materials and the use of known interactions to isolate free radical generation from free radical interaction with a target molecule.

Abstract: This disclosure provides methods, systems, and compositions of matter for studying solvent accessibility and three-dimensional structure of biological molecules. A plasma can be used to generate marker radicals, which can interact with a biological molecule and mark the solvent-accessible portions of the biological molecule.

Abstract: This disclosure provides methods, systems, and compositions of matter for studying solvent accessibility and three-dimensional structure of biological molecules. A plasma can be used to generate marker radicals, which can interact with a biological molecule and mark the solvent-accessible portions of the biological molecule.

Abstract: This disclosure provides methods, systems, and compositions of matter for studying solvent accessibility and three-dimensional structure of biological molecules. A plasma can be used to generate marker radicals, which can interact with a biological molecule and mark the solvent-accessible portions of the biological molecule.

Abstract: A method of forming a low dielectric constant (low-k) dielectric is disclosed. The method includes providing a substrate and forming a dielectric including porogens over the substrate. While subjecting the dielectric to a first pressure, the dielectric is exposed to ultraviolet (UV) radiation. The dielectric is also subject to a second pressure less than 1×10?3 Torr. While subjecting the dielectric to the second pressure, the dielectric is exposed to vacuum UV (VUV) radiation having one or more photon energies greater than 7 eV. Since it is difficult for VUV radiation to travel through a medium at a pressure greater than 10 Torr without being absorbed by intermittent materials, subjecting the dielectric to the second pressure creates a medium wherein the dielectric can be exposed to the VUV radiation. By exposing the dielectric to UV and VUV radiation, the dielectric can achieve a reduced dielectric constant and increased mechanical properties.

Abstract: A method of forming a low dielectric constant (low-k) dielectric is disclosed. The method includes providing a substrate and forming a dielectric including porogens over the substrate. While subjecting the dielectric to a first pressure, the dielectric is exposed to ultraviolet (UV) radiation. The dielectric is also subject to a second pressure less than 1×10?3 Torr. While subjecting the dielectric to the second pressure, the dielectric is exposed to vacuum UV (VUV) radiation having one or more photon energies greater than 7 eV. Since it is difficult for VUV radiation to travel through a medium at a pressure greater than 10 Torr without being absorbed by intermittent materials, subjecting the dielectric to the second pressure creates a medium wherein the dielectric can be exposed to the VUV radiation. By exposing the dielectric to UV and VUV radiation, the dielectric can achieve a reduced dielectric constant and increased mechanical properties.

Abstract: The present disclosure provides systems and methods for characterizing the interaction of free radicals with various materials and the use of known interactions to isolate free radical generation from free radical interaction with a target molecule.

Abstract: This disclosure provides methods, systems, and compositions of matter for studying solvent accessibility and three-dimensional structure of biological molecules. A plasma can be used to generate marker radicals, which can interact with a biological molecule and mark the solvent-accessible portions of the biological molecule.

Abstract: A method and apparatus for reducing plasma-induced charging damage in a semiconducting device are provided. The method includes exposing an article having a dielectric material susceptible to plasma-induced charging, to vacuum-ultraviolet (VUV) radiation of an energy greater than the bandgap energy of the dielectric material during or after plasma processing of the device. The plasma-induced charge is conducted from, or recombined at, the charging site.

Abstract: A method and apparatus for reducing plasma-induced charging damage in a semiconducting device are provided. The method includes exposing an article having a dielectric material susceptible to plasma-induced charging, to vacuum-ultraviolet (VUV) radiation of an energy greater than the bandgap energy of the dielectric material during or after plasma processing of the device. The plasma-induced charge is conducted from, or recombined at, the charging site.

Abstract: A method and apparatus for forming a buried insulator layer, typically a silicon dioxide layer, includes using plasma source ion implantation to uniformly implant ions into exposed regions of a semiconductor wafer. A silicon-on-insulator (SOI) structure is formed by an anneal step before fabricating an integrated circuit into the thin semiconductor layer above the buried insulator layer.

Abstract: Liquid phase polymers deposited upon a substrate are cross-linked in the presence of a non-polymer-forming gas plasma to produce solid polymer coatings having improved chemical, thermal, and mechanical properties. The properties of the polymer layers formed in the method may be exploited by producing microelectronic circuitry, optical materials, and barrier coatings for a variety of substrate materials.

Abstract: A hazardou waste incinerator which utilizes a cyclotron resonance plasma. The plasma is generated by introducing vaporized hazardous material and a feed gas into a vacuum chamber. The chamber has a magnetic field source and an electromagnetic radiation source. The cyclotron resonance plasma is produced by the resonance that occurs when the frequency of the electromagnetic radiation is set equal to that of the gyration of electrons or other charged particles in the magnetic field according to the formula: F.sub.res =(1/2.pi.)(qB/m) hertz Where q is the charge of the electron or ion, B is the strength of the magnetic field and m is the mass of the electron or ion. The strength of the electromagnetic radiation is adjusted so that the flowing gases are ionized, forming a plasma. During the reaction, the charged particles collide with neutral particles, providing both ionization and fragmentation (the breaking up of high-mass molecules into lower mass fragments).