Abstract: The present invention computes a discrete cosine transform (DCT), for example, an 18-point DCT in a fast and efficient manner. Furthermore, using this 18-point DCT method, two new methods are developed to compute the MDCT and its IMDCT, respectively. The number of multiplications and additions needed to implement both of these two new methods are reduced substantially.

Abstract: A process is described for making semiconductor devices with highly controlled doping profiles. The process involves minimizing or eliminating segregation effects caused by surface electric fields created by Fermi-level pinning. These electric fields act on dopant ions and cause migration from the original deposition site of the doplant ions. Dopant ions are effectively shielded from the surface electric fields by illumination of the growth surfaces and by background doping. Also, certain crystallographic directions in certain semiconductors do not show Fermi-level pinning and lower growth temperatures retard or eliminate segregation effects. Devices are described which exhibit enhanced characteristics with highly accurate and other very narrow doping profiles.