Patents by Inventor J. Michael Brand

J. Michael Brand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for filling a gap between spaced layers of a semiconductor
    Patent number: 6706555
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Grant
    Filed: August 13, 2002
    Date of Patent: March 16, 2004
    Assignee: Micron Technology, Inc.
    Inventor: J. Michael Brand
  • Apparatus for filling a gap between spaced layers of a semiconductor
    Patent number: 6685454
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Grant
    Filed: August 5, 2002
    Date of Patent: February 3, 2004
    Assignee: Micron Technology, Inc.
    Inventor: J. Michael Brand
  • Method and apparatus for filling a gap between spaced layers of a semiconductor
    Publication number: 20020192320
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Application
    Filed: August 5, 2002
    Publication date: December 19, 2002
    Inventor: J. Michael Brand
  • Method and apparatus for filling a gap between spaced layers of a semiconductor
    Publication number: 20020192861
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Application
    Filed: August 13, 2002
    Publication date: December 19, 2002
    Inventor: J. Michael Brand
  • Method and apparatus for filling a gap between spaced layers of a semiconductor
    Patent number: 6455349
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Grant
    Filed: April 4, 2001
    Date of Patent: September 24, 2002
    Assignee: Micron Technology, Inc.
    Inventor: J. Michael Brand
  • Apparatus for filling a gap between spaced layers of a semiconductor
    Patent number: 6443720
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Grant
    Filed: August 30, 2001
    Date of Patent: September 3, 2002
    Assignee: Micron Technology, Inc.
    Inventor: J. Michael Brand
  • Method and apparatus for filling a gap between spaced layers of a semiconductor
    Publication number: 20020031566
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Application
    Filed: August 30, 2001
    Publication date: March 14, 2002
    Inventor: J. Michael Brand
  • Apparatus for filling a gap between spaced layers of a semiconductor
    Patent number: 6325606
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Grant
    Filed: August 29, 2000
    Date of Patent: December 4, 2001
    Assignee: Micron Technology, Inc.
    Inventor: J. Michael Brand
  • Method and apparatus for filling a gap between spaced layers of a semiconductor
    Publication number: 20010018261
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Application
    Filed: April 4, 2001
    Publication date: August 30, 2001
    Inventor: J. Michael Brand
  • Method and apparatus for filling a gap between spaced layers of a semiconductor
    Patent number: 6232145
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Grant
    Filed: October 29, 1998
    Date of Patent: May 15, 2001
    Assignee: Micron Technology, Inc.
    Inventor: J. Michael Brand
  • Apparatus for filling a gap between spaced layers of a semiconductor
    Patent number: 6179598
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Grant
    Filed: December 10, 1998
    Date of Patent: January 30, 2001
    Assignee: Micron Technology, Inc.
    Inventor: J. Michael Brand
  • Device assembly facilitating gap filling between spaced layers of semiconductor substrates
    Patent number: 6124643
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Grant
    Filed: December 10, 1998
    Date of Patent: September 26, 2000
    Assignee: Micron Technology, Inc.
    Inventor: J. Michael Brand
  • Method and apparatus for filling a gap between spaced layers of a semiconductor
    Patent number: 5866442
    Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.
    Type: Grant
    Filed: January 28, 1997
    Date of Patent: February 2, 1999
    Assignee: Micron Technology, Inc.
    Inventor: J. Michael Brand