Patents by Inventor J. Mike Brooks
J. Mike Brooks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers
Patent number: 8092734Abstract: Methods for forming and attaching covers to microelectronic imaging units, packaging microelectronic imagers at the wafer level, and microelectronic imagers having covers that protect the image sensor are disclosed herein. In one embodiment, a method includes providing a first substrate having a plurality of covers, the covers including windows comprising regions of the first substrate and stand-offs projecting from the windows. The method continues by providing a second substrate having a plurality of microelectronic dies with image sensors, integrated circuits electrically coupled to the image sensors, and terminals electrically coupled to the integrated circuits. The method includes assembling the covers with corresponding dies so that the windows are aligned with corresponding image sensors and stand-offs contact corresponding dies inboard of the terminals and outboard of the image sensors.Type: GrantFiled: May 13, 2004Date of Patent: January 10, 2012Assignee: Aptina Imaging CorporationInventors: Tongbi Jiang, J. Mike Brooks -
Publication number: 20080132006Abstract: Packaged microelectronic devices and methods for packaging microelectronic devices are disclosed herein. In one embodiment, a method of packaging a microelectronic device including a microelectronic die having a first side with a plurality of bond-pads and a second side opposite the first side includes forming a recess in a substrate, placing the microelectronic die in the recess formed in the substrate with the second side facing toward the substrate, and covering the first side of the microelectronic die with a dielectric layer after placing the microelectronic die in the recess. The substrate can include a thermal conductive substrate, such as a substrate comprised of copper and/or aluminum. The substrate can have a coefficient of thermal expansion at least approximately equal to the coefficient of thermal expansion of the microelectronic die or a printed circuit board.Type: ApplicationFiled: February 8, 2008Publication date: June 5, 2008Applicant: Micron Technology, Inc.Inventors: Tongbi Jiang, J. Mike Brooks
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Patent number: 7312101Abstract: Packaged microelectronic devices and methods for packaging microelectronic devices are disclosed herein. In one embodiment, a method of packaging a microelectronic device including a microelectronic die having a first side with a plurality of bond-pads and a second side opposite the first side includes forming a recess in a substrate, placing the microelectronic die in the recess formed in the substrate with the second side facing toward the substrate, and covering the first side of the microelectronic die with a dielectric layer after placing the microelectronic die in the recess. The substrate can include a thermal conductive substrate, such as a substrate comprised of copper and/or aluminum. The substrate can have a coefficient of thermal expansion at least approximately equal to the coefficient of thermal expansion of the microelectronic die or a printed circuit board.Type: GrantFiled: April 22, 2003Date of Patent: December 25, 2007Assignee: Micron Technology, Inc.Inventors: Tongbi Jiang, J. Mike Brooks
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Publication number: 20040214373Abstract: Packaged microelectronic devices and methods for packaging microelectronic devices are disclosed herein. In one embodiment, a method of packaging a microelectronic device including a microelectronic die having a first side with a plurality of bond-pads and a second side opposite the first side includes forming a recess in a substrate, placing the microelectronic die in the recess formed in the substrate with the second side facing toward the substrate, and covering the first side of the microelectronic die with a dielectric layer after placing the microelectronic die in the recess. The substrate can include a thermal conductive substrate, such as a substrate comprised of copper and/or aluminum. The substrate can have a coefficient of thermal expansion at least approximately equal to the coefficient of thermal expansion of the microelectronic die or a printed circuit board.Type: ApplicationFiled: April 22, 2003Publication date: October 28, 2004Inventors: Tongbi Jiang, J. Mike Brooks
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Patent number: 6740545Abstract: A semiconductor die includes a metal layer deposited thereon for enhancing adhesion between the die and a mold compound package. The metal layer is substantially oxide free. The die is coated with a layer or layers of copper (Cu) and/or palladium (Pd) by electroplating or electroless coating techniques. The metal layer provides a uniform wetting surface for better adhesion of the die with the mold compound packaging during encapsulation. The increased adhesion reduces the delamination potential of the die from the package.Type: GrantFiled: December 3, 2002Date of Patent: May 25, 2004Assignee: Micron Technology, Inc.Inventors: Jerrold L. King, J. Mike Brooks, Walter L. Moden
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Patent number: 6699734Abstract: A method and apparatus for coupling a semiconductor die to terminals of a die package in which the die is housed. The apparatus comprises a die having first and second terminals. A first conductive member is elongated between a first end portion and a second end portion thereof such that the second end portion is proximate to the first terminal. A second conductive member is elongated between a first end portion and second end portion thereof such that the second end portion of the second conductive member is proximate to the second terminal of the die and the second conductive member is generally parallel to the first conductive member. The second end portions of the first and second conductive members may be coupled with conductive couplers to the first and second die terminals, respectively. The conductive members and conductive couplers may be sized and shaped to produce a selected capacitance and/or a selected impedance at the die terminals.Type: GrantFiled: January 31, 2003Date of Patent: March 2, 2004Assignee: Micron Technology, Inc.Inventors: Aaron Schoenfeld, Manny K. F. Ma, Larry D. Kinsman, J. Mike Brooks, Timothy J. Allen
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Patent number: 6600215Abstract: A method and apparatus for coupling a semiconductor die to terminals of a die package in which the die is housed. The apparatus comprises a die having first and second terminals. A first conductive member is elongated between a first end portion and a second end portion thereof such that the second end portion is proximate to the first terminal. A second conductive member is elongated between a first end portion and second end portion thereof such that the second end portion of the second conductive member is proximate to the second terminal of the die and the second conductive member is generally parallel to the first conductive member. The second end portions of the first and second conductive members may be coupled with conductive couplers to the first and second die terminals, respectively. The conductive members and conductive couplers may be sized and shaped to produce a selected capacitance and/or a selected impedance at the die terminals.Type: GrantFiled: April 2, 1998Date of Patent: July 29, 2003Assignee: Micron Technology, Inc.Inventors: Aaron Schoenfeld, Manny K. F. Ma, Larry D. Kinsman, J. Mike Brooks, Timothy J. Allen
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Publication number: 20030113953Abstract: A method and apparatus for coupling a semiconductor die to terminals of a die package in which the die is housed. The apparatus comprises a die having first and second terminals. A first conductive member is elongated between a first end portion and a second end portion thereof such that the second end portion is proximate to the first terminal. A second conductive member is elongated between a first end portion and second end portion thereof such that the second end portion of the second conductive member is proximate to the second terminal of the die and the second conductive member is generally parallel to the first conductive member. The second end portions of the first and second conductive members may be coupled with conductive couplers to the first and second die terminals, respectively. The conductive members and conductive couplers may be sized and shaped to produce a selected capacitance and/or a selected impedance at the die terminals.Type: ApplicationFiled: January 31, 2003Publication date: June 19, 2003Inventors: Aaron Schoenfeld, Manny K.F. Ma, Larry D. Kinsman, J. Mike Brooks, Timothy J. Allen
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Patent number: 6579746Abstract: A method and apparatus for coupling a semiconductor die to terminals of a die package in which the die is housed. The apparatus comprises a die having first and second terminals. A first conductive member is elongated between a first end portion and a second end portion thereof such that the second end portion is proximate to the first terminal. A second conductive member is elongated between a first end portion and second end portion thereof such that the second end portion of the second conductive member is proximate to the second terminal of the die and the second conductive member is generally parallel to the first conductive member. The second end portions of the first and second conductive members may be coupled with conductive couplers to the first and second die terminals, respectively. The conductive members and conductive couplers may be sized and shaped to produce a selected capacitance and/or a selected impedance at the die terminals.Type: GrantFiled: August 17, 2001Date of Patent: June 17, 2003Assignee: Micron Technology, Inc.Inventors: Aaron Schoenfeld, Manny K. F. Ma, Larry D. Kinsman, J. Mike Brooks, Timothy J. Allen
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Patent number: 6559519Abstract: An integrated circuit including a fabricated die having a cyanate ester buffer coating material thereon. The cyanate ester buffer coating material includes one or more openings for access to the die. A package device may be connected to the die bond pads through such openings. Further, an integrated circuit device is provided that includes a fabricated wafer including a plurality of integrated circuits fabricated thereon. The fabricated wafer has an upper surface with a cyanate ester buffer coating material cured on the upper surface of the fabricated integrated circuit device. Further, a method of producing an integrated circuit device includes providing a fabricated wafer including a plurality of integrated circuits and applying a cyanate ester coating material on a surface of the fabricated wafer. The application of cyanate ester coating material may include spinning the cyanate ester coating material on the surface of the fabricated wafer to form a buffer coat.Type: GrantFiled: July 16, 2002Date of Patent: May 6, 2003Assignee: Micron Technology, Inc.Inventors: J. Mike Brooks, Jerrold L. King, Kevin Schofield
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Publication number: 20030082849Abstract: A semiconductor die includes a metal layer deposited thereon for enhancing adhesion between the die and a mold compound package. The metal layer is substantially oxide free. The die is coated with a layer or layers of copper (Cu) and/or palladium (Pd) by electroplating or electroless coating techniques. The metal layer provides a uniform wetting surface for better adhesion of the die with the mold compound during encapsulation. The increased adhesion reduces the delamination potential of the die from the package.Type: ApplicationFiled: December 3, 2002Publication date: May 1, 2003Inventors: Jerrold L. King, J. Mike Brooks, Walter L. Moden
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Publication number: 20020195687Abstract: An integrated circuit including a fabricated die having a cyanate ester buffer coating material thereon. The cyanate ester buffer coating material includes one or more openings for access to the die. A package device may be connected to the die bond pads through such openings. Further, an integrated circuit device is provided that includes a fabricated wafer including a plurality of integrated circuits fabricated thereon. The fabricated wafer has an upper surface with a cyanate ester buffer coating material cured on the upper surface of the fabricated integrated circuit device. Further, a method of producing an integrated circuit device includes providing a fabricated wafer including a plurality of integrated circuits and applying a cyanate ester coating material on a surface of the fabricated wafer. The application of cyanate ester coating material may include spinning the cyanate ester coating material on the surface of the fabricated wafer to form a buffer coat.Type: ApplicationFiled: July 16, 2002Publication date: December 26, 2002Applicant: MICRON TECHNOLOGY, INC.Inventors: J. Mike Brooks, Jerrold L. King, Kevin Schofield
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Patent number: 6489186Abstract: A semiconductor die includes a metal layer deposited thereon for enhancing adhesion between the die and a mold compound package. The metal layer is substantially oxide free. The die is coated with a layer or layers of copper (Cu) and/or palladium (Pd) by electroplating or electroless coating techniques. The metal layer provides a uniform wetting surface for better adhesion of the die with the mold compound during encapsulation. The increased adhesion reduces the delamination potential of the die from the package.Type: GrantFiled: June 4, 2001Date of Patent: December 3, 2002Assignee: Micron Technology, Inc.Inventors: Jerrold L. King, J. Mike Brooks, Walter L. Moden
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Patent number: 6420214Abstract: An integrated circuit including a fabricated die having a cyanate ester buffer coating material thereon. The cyanate ester buffer coating material includes one or more openings for access to the die. A package device may be connected to the die bond pads through such openings. Further, an integrated circuit device is provided that includes a fabricated wafer including a plurality of integrated circuits fabricated thereon. The fabricated wafer has an upper surface with a cyanate ester buffer coating material cured on the upper surface of the fabricated integrated circuit device. Further, a method of producing an integrated circuit device includes providing a fabricated wafer including a plurality of integrated circuits and applying a cyanate ester coating material on a surface of the fabricated wafer. The application of cyanate ester coating material may include spinning the cyanate ester coating material on the surface of the fabricated wafer to form a buffer coat.Type: GrantFiled: April 19, 2000Date of Patent: July 16, 2002Assignee: Micron Technology, Inc.Inventors: J. Mike Brooks, Jerrold L. King, Kevin Schofield
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Patent number: 6362532Abstract: A method for forming a semiconductor device comprises the steps of providing a semiconductor die having a plurality of pads thereon with at least one bond wire electrically coupled with one of the pads and providing a holder having a cavity therein. The die is placed in the cavity, then a layer of encapsulation is formed within the cavity to cover the die. Subsequently, the encapsulated die is removed from the cavity.Type: GrantFiled: March 28, 2000Date of Patent: March 26, 2002Assignee: Micron Technology, Inc.Inventors: J. Mike Brooks, Alan G. Wood, Kevin G. Duesman
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Publication number: 20010052638Abstract: A method and apparatus for coupling a semiconductor die to terminals of a die package in which the die is housed. The apparatus comprises a die having first and second terminals. A first conductive member is elongated between a first end portion and a second end portion thereof such that the second end portion is proximate to the first terminal. A second conductive member is elongated between a first end portion and second end portion thereof such that the second end portion of the second conductive member is proximate to the second terminal of the die and the second conductive member is generally parallel to the first conductive member. The second end portions of the first and second conductive members may be coupled with conductive couplers to the first and second die terminals, respectively. The conductive members and conductive couplers may be sized and shaped to produce a selected capacitance and/or a selected impedance at the die terminals.Type: ApplicationFiled: August 17, 2001Publication date: December 20, 2001Inventors: Aaron Schoenfeld, Manny K.F. Ma, Larry D. Kinsman, J. Mike Brooks, Timothy J. Allen
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Patent number: 6316292Abstract: A semiconductor die includes a metal layer deposited thereon for enhancing adhesion between the die and a mold compound package. The metal layer is substantially oxide free. The die is coated with a layer or layers of copper (Cu) and/or palladium (Pd) by electroplating or electroless coating techniques. The metal layer provides a uniform wetting surface for better adhesion of the die with the mold compound during encapsulation. The increased adhesion reduces the delamination potential of the die from the package.Type: GrantFiled: September 10, 1999Date of Patent: November 13, 2001Inventors: Jerrold L. King, J. Mike Brooks, Walter L. Moden
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Publication number: 20010024840Abstract: A semiconductor die includes a metal layer deposited thereon for enhancing adhesion between the die and a mold compound package. The metal layer is substantially oxide free. The die is coated with a layer or layers of copper (Cu) and/or palladium (Pd) by electroplating or electroless coating techniques. The metal layer provides a uniform wetting surface for better adhesion of the die with the mold compound during encapsulation. The increased adhesion reduces the delamination potential of the die from the package.Type: ApplicationFiled: June 4, 2001Publication date: September 27, 2001Inventors: Jerrold L. King, J. Mike Brooks, Walter L. Moden
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Patent number: 6066514Abstract: A semiconductor die includes a metal layer deposited thereon for enhancing adhesion between the die and a mold compound package. The metal layer is substantially oxide free. The die is coated with a layer or layers of copper (Cu) and/or palladium (Pd) by electroplating or electroless coating techniques. The metal layer provides a uniform wetting surface for better adhesion of the die with the mold compound during encapsulation. The increased adhesion reduces the delamination potential of the die from the package.Type: GrantFiled: November 3, 1997Date of Patent: May 23, 2000Assignee: Micron Technology, Inc.Inventors: Jerrold L. King, J. Mike Brooks, Walter L. Moden
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Patent number: 6060343Abstract: An integrated circuit including a fabricated die having a cyanate ester buffer coating material thereon. The cyanate ester buffer coating material includes one or more openings for access to the die. A package device may be connected to the die bond pads through such openings. Further, an integrated circuit device is provided that includes a fabricated wafer including a plurality of integrated circuits fabricated thereon. The fabricated wafer has an upper surface with a cyanate ester buffer coating material cured on the upper surface of the fabricated integrated circuit device. Further, a method of producing an integrated circuit device includes providing a fabricated wafer including a plurality of integrated circuits and applying a cyanate ester coating material on a surface of the fabricated wafer. The application of cyanate ester coating material may include spinning the cyanate ester coating material on the surface of the fabricated wafer to form a buffer coat.Type: GrantFiled: February 25, 1999Date of Patent: May 9, 2000Assignee: Micron Technology, Inc.Inventors: J. Mike Brooks, Jerrold L. King, Kevin Schofield