Patents by Inventor J. Olufemi Olowolafe

J. Olufemi Olowolafe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having a metal containing layer overlying a gate dielectric
    Patent number: 6084279
    Abstract: Metal semiconductor nitride gate electrodes (40, 70) are formed for use in a semiconductor device (60). The gate electrodes (40, 70) may be formed by sputter deposition, low pressure chemical vapor deposition (LPCVD), or plasma enhanced chemical vapor deposition (PECVD). The materials are expected to etch similar to silicon-containing compounds and may be etched in traditional halide-based etching chemistries. The metal semiconductor nitride gate electrodes (40, 70) are relatively stable, can be formed relatively thinner than traditional gate electrodes (40, 70) and work functions near the middle of the band gap for the material of the substrate (12).
    Type: Grant
    Filed: March 31, 1997
    Date of Patent: July 4, 2000
    Assignee: Motorola Inc.
    Inventors: Bich-Yen Nguyen, J. Olufemi Olowolafe, Bikas Maiti, Olubunmi Adetutu, Philip J. Tobin