Patents by Inventor J. Patrick Rymer

J. Patrick Rymer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for depositing superior Ta (N) copper thin films for barrier and seed applications in semiconductor processing
    Patent number: 6905959
    Abstract: A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about ?70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.
    Type: Grant
    Filed: December 31, 2002
    Date of Patent: June 14, 2005
    Assignee: Novellus Systems, Inc.
    Inventors: Kaihan A. Ashtiani, Maximilian A. Biberger, Erich R. Klawuhn, Kwok Fai Lai, Karl B. Levy, J. Patrick Rymer
  • Apparatus and method for depositing superior Ta(N)/copper thin films for barrier and seed applications in semiconductor processing
    Patent number: 6541371
    Abstract: A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about −70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.
    Type: Grant
    Filed: January 26, 2000
    Date of Patent: April 1, 2003
    Assignee: Novellus Systems, Inc.
    Inventors: Kaihan A. Ashtiani, Maximilian A. Biberger, Erich R. Klawuhn, Kwok Fai Lai, Karl B. Levy, J. Patrick Rymer