Abstract: The invention relates to a power semiconductor module having at least one semiconductor chip (11) made of a semiconductor material and having a first and a second main electrode (12, 13), a first and a second main connection (91, 92) and a contact lamina (2) in electrical contact with the first main electrode (12) and the first main connection (92). The contact lamina (2) contains an alloying partner which can form a eutectic with the semiconductor material. According to the invention, the contact lamina is coated with an electrically conductive protective layer (31, 32) that prevents formation of a fixed material connection between the first main electrode (12) and the contact lamina (2).

Abstract: The pressure contact spring (3) according to the invention comprises two contacting regions (31, 32) for contacting metallized contact pads (1, 2), one contacting region comprising a contact tip (31). Arranged between the contacting regions is a compressing region (33). The contact tip is rounded with an outer radius. The rounded contact tip penetrates only little into the metallization of the contact pad even under high spring force.

Abstract: The pressure contact spring (3) according to the invention comprises two contacting regions (31, 32) for contacting metallized contact pads (1, 2), one contacting region comprising a contact tip (31). Arranged between the contacting regions is a compressing region (33). The contact tip is rounded with an outer radius. The rounded contact tip penetrates only little into the metallization of the contact pad even under high spring force.

Abstract: In a method for forming a stepped profile from a layer sequence comprising a first patterning step, in which a first layer partial sequence is removed apart from a first residual layer partial sequence, a second patterning step, in which a second layer partial sequence located below the first layer partial sequence is partially removed by means of etching with a second etchant, and a third patterning step, in which a third layer partial sequence located below the second layer partial sequence is partially removed by means of etching with a third etchant, according to the invention, a region of the second layer partial sequence that is located below the first residual layer partial sequence is removed in the second patterning step and the first projection of the first residual layer partial sequence is removed in the third patterning step.

Abstract: The invention relates to a power semiconductor module having at least one semiconductor chip (11) made of a semiconductor material and having a first and a second main electrode (12, 13), a first and a second main connection (91, 92) and a contact lamina (2) in electrical contact with the first main electrode (12) and the first main connection (92). The contact lamina (2) contains an alloying partner which can form a eutectic with the semiconductor material. According to the invention, the contact lamina is coated with an electrically conductive protective layer (31, 32) that prevents formation of a fixed material connection between the first main electrode (12) and the contact lamina (2).