Patents by Inventor Jérôme Chandra Bhat

Jérôme Chandra Bhat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160197244
    Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.
    Type: Application
    Filed: March 10, 2016
    Publication date: July 7, 2016
    Inventors: DANIEL ALEXANDER STEIGERWALD, JEROME CHANDRA BHAT, SALMAN AKRAM
  • Publication number: 20160020198
    Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.
    Type: Application
    Filed: September 29, 2015
    Publication date: January 21, 2016
    Inventors: DANIEL ALEXANDER STEIGERWALD, JEROME CHANDRA BHAT, SALMAN AKRAM
  • Patent number: 9153758
    Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.
    Type: Grant
    Filed: May 21, 2012
    Date of Patent: October 6, 2015
    Assignee: Koninklijke Philips N.V.
    Inventors: Daniel Alexander Steigerwald, Jérôme Chandra Bhat, Salman Akram
  • Publication number: 20140220716
    Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.
    Type: Application
    Filed: May 21, 2012
    Publication date: August 7, 2014
    Applicant: KONINKLIJKE PHILIPS N.V.
    Inventors: Daniel Alexandria Steigerwald, Jérôme Chandra Bhat, Salman Akram