Patents by Inventor Jérôme Faure-Vincent

Jérôme Faure-Vincent has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR MANUFACTURING PARTICLES SUCH AS MAGNETIC MICRO- OR NANOPARTICLES
    Publication number: 20130052343
    Abstract: A method for manufacturing particles includes depositing on a substrate a layer of a first sacrificial material; depositing on the layer of the first sacrificial material a layer of a second sacrificial material that is different from the first sacrificial material; forming cavities in the layer of the second sacrificial material, the forming including pressing a structured mold against the layer of second sacrificial material; depositing a material for manufacturing the particles, the material covering the layer of the second material and at least partially filling the cavities; selectively removing the second sacrificial material from the first sacrificial material so as to obtain the particles formed by the material and arranged on the layer of the first sacrificial material; and eliminating the first sacrificial material to release the particles.
    Type: Application
    Filed: April 12, 2011
    Publication date: February 28, 2013
    Applicant: Commissariat à l' énergie atomique et aux énergies alternatives
    Inventors: Bernard Dieny, Philippe Sabon, Jérôme Faure Vincent
  • Magnetoresistive tunnel junction magnetic device and its application to MRAM
    Patent number: 7821818
    Abstract: The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.
    Type: Grant
    Filed: October 13, 2006
    Date of Patent: October 26, 2010
    Assignees: Comissariat a l'Energie Atomique et aux Energies Alternatives, Centre National de la Recherche Scientifique (CNRS)
    Inventors: Bernard Dieny, Anatoly Vedyaev, Jérôme Faure-Vincent, Patrick Warin, Matthieu Jamet, Yves Samson
  • Magnetoresistive Tunnel Junction Magnetic Device and Its Application to MRAM
    Publication number: 20090231909
    Abstract: The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.
    Type: Application
    Filed: October 13, 2006
    Publication date: September 17, 2009
    Applicants: Commissariat a l'Energie Atomique, Centre National de La Recherche Scientifique (CNRS)
    Inventors: Bernard Dieny, Anatoly Vedyaev, Jerome Faure-Vincent, Patrick Warin, Matthieu Jamet, Yves Samson