Abstract: A method for characterizing image sensor pixels arranged in an array, including the steps of: (a) illuminating a first portion of the array formed of pixels associated with a color filter of a first color; (b) measuring the detection performed by a central pixel of the first portion; (c) illuminating a second portion of the array formed of a central pixel associated with a color filter of a second color and of peripheral pixels associated with a color filter of the first color; (d) measuring the detection performed by the central pixel and the peripheral pixels of the second portion; (e) comparing the measurements of steps (b) and (d).

Abstract: An image sensor includes a substrate, transparent layers covering the substrate and delimiting an exposition surface exposed to light, separate photosensitive areas at the substrate level and, for each photosensitive area, a first optical means capable of deviating towards the photosensitive area light reaching a central region of a portion of the exposition surface. The sensor further includes, for each photosensitive area, a second optical means, separate from the first optical means, capable of deviating towards the photosensitive area light reaching a peripheral region of the portion of the exposition surface surrounding the central region.

Abstract: The disclosure relates to a method for reconstruction of a three-dimensional image of an object. A first image is acquired of the object lit by a luminous flux having, in a region including the object, a luminous intensity dependant on the distance, with a light source emitting the luminous flux. A second image is acquired of the object lit by a luminous flux having, in a region including the object, a constant luminous intensity. For each pixel of a three-dimensional image, a relative distance of a point of the object is determined as a function of the intensity of a pixel corresponding to the point of the object in each of the acquired images.

Abstract: An image sensor having a surface intended to be illuminated and pixels, each pixel including a photosensitive area formed in an active area of the substrate, at least one first pixel including a first microlens located on the surface, the sensor including at least one second pixel including a transparent portion forming a pedestal located at least partly on the surface and a second microlens at least partially covering the pedestal.

Abstract: A color back-side illuminated image sensor including, on the side of the thin semiconductor layer opposite to the illuminated surface, periodic thickness unevennesses forming an optic network having characteristics which make it capable of reflecting a given wavelength chosen within the range of the wavelengths of an illuminating incident beam.

Abstract: An image sensor including an array of pixels, wherein each pixel includes, in a vertical stack: a central photosensitive area; a stack of interconnects on top of the periphery of the photosensitive area, extending upwards up to a first height; a filtering layer on top of the photosensitive area, extending upwards from a height lower than the first height; and a microlens overlying the filtering layer in vertical projection, the optical axis of this microlens being such that the light rays received by the pixel reach the photosensitive area, substantially at its center.

Abstract: A near infrared/color photodetector made in a monolithic form in a lightly-doped substrate of a first conductivity type covering a holder and comprising a face on the side opposed to the holder. The photodetector includes at least first and second photodiodes for the storage of electric charges photogenerated in the substrate, the second photodiode being adjacent to said face; and a first region extending at least between the second photodiode and the holder, preventing the passage of said charges between a first substrate portion being located between said region and the holder and a second substrate portion extending between said face and the first region, the first photodiode being adapted to store at least charges photogenerated in the first substrate portion and the second photodiode being adapted to store charges photogenerated in the second substrate portion.

Abstract: An image sensor pixel structure including: a photosensitive area surrounded with a peripheral area placed at the surface of a semiconductor substrate, a stack of several insulating layers alternately exhibiting different refraction coefficients and placed above the peripheral area, a microlens placed at the top of the pixel to have the pixel light converge towards the photosensitive area, and a transparent block placed substantially above the photosensitive area.

Abstract: An image sensor having a surface intended to be illuminated and pixels, each pixel including a photosensitive area formed in an active area of the substrate, at least one first pixel including a first microlens located on the surface, the sensor including at least one second pixel including a transparent portion forming a pedestal located at least partly on the surface and a second microlens at least partially covering the pedestal.

Abstract: An image sensor pixel structure including a photosensitive area; a stacking of insulating layers covering the photosensitive area; and a device for focusing the light of the pixel to the photosensitive area. The focusing device includes first and second microlenses, the first microlens being arranged between layers of the stacking and substantially conjugating the second microlens with the photosensitive area.

Abstract: An image sensor includes a substrate, transparent layers covering the substrate and delimiting an exposition surface exposed to light, separate photosensitive areas at the substrate level and, for each photosensitive area, a first optical means capable of deviating towards the photosensitive area light reaching a central region of a portion of the exposition surface. The sensor further includes, for each photosensitive area, a second optical means, separate from the first optical means, capable of deviating towards the photosensitive area light reaching a peripheral region of the portion of the exposition surface surrounding the central region.

Abstract: An image sensor pixel structure including: a photosensitive area surrounded with a peripheral area placed at the surface of a semiconductor substrate, a stack of several insulating layers alternately exhibiting different refraction coefficients and placed above the peripheral area, a microlens placed at the top of the pixel to have the pixel light converge towards the photosensitive area, and a transparent block placed substantially above the photosensitive area.

Abstract: An image sensor pixel structure including a photosensitive area; a stacking of insulating layers covering the photosensitive area; and a device for focusing the light of the pixel to the photosensitive area. The focusing device includes first and second microlenses, the first microlens being arranged between layers of the stacking and substantially conjugating the second microlens with the photosensitive area.