Abstract: A power electronic assembly with a sleeve that has a virtual longitudinal axis and a circuit carrier. The sleeve has a tube-shaped plug-in section which runs around the longitudinal axis, and a first base section arranged at a first end of the plug-in section and runs around the longitudinal axis and extends away from the longitudinal axis. The first base section has at its end a flat first contact surface which runs around the longitudinal axis in a closed manner and which runs in a first plane which runs perpendicular to the longitudinal axis. The first base section has an edge surface which runs around the longitudinal axis in a closed manner and the first base section has a second contact surface which runs from the first contact surface and away from the first plane in the direction towards the edge surface.

Abstract: A power semiconductor module has a substrate and an insulation layer and a metal layer arranged on the insulation layer, forming conductor tracks, comprising power semiconductor components arranged on the metal layer and conductively contacted with the metal layer. A pressure device arranged above the substrate in the normal direction of the insulation layer and having a pressure body and pressure elements running toward the substrate. The pressure elements each being connected to the pressure body to move resiliently in the normal direction via a spring element. The pressure body exerting a pressure onto the pressure elements in the direction toward the substrate via the spring elements, the pressure elements being arranged in such a way that, owing to the pressure exerted by the pressure body, they press onto power semiconductor component surrounding regions, surrounding the power semiconductor components, of the substrate.

Abstract: A power electronic assembly with a sleeve that has a virtual longitudinal axis and a circuit carrier. The sleeve has a tube-shaped plug-in section which runs around the longitudinal axis, and a first base section arranged at a first end of the plug-in section and runs around the longitudinal axis and extends away from the longitudinal axis. The first base section has at its end a flat first contact surface which runs around the longitudinal axis in a closed manner and which runs in a first plane which runs perpendicular to the longitudinal axis. The first base section has an edge surface which runs around the longitudinal axis in a closed manner and the first base section has a second contact surface which runs from the first contact surface and away from the first plane in the direction towards the edge surface.

Abstract: The invention relates to a power semiconductor device comprising a pin element which passes through a housing opening, comprising a support device, further comprising an elastic sealing device which is arranged on the support device, comprising a pressure device which is arranged on the sealing device, and comprising an electrically conductive sleeve. A first pressure element of the pressure device presses a first sealing element of the sealing device against a first support element of the support device in the axial direction of the pin element causes deformation of the first sealing element so that the first sealing element presses against the housing opening wall and against the sleeve in a perpendicular direction in relation to the axial direction of the pin element.

Abstract: The apparatus serves for inhomogeneous cooling of a flat object with a first main face and a second main face opposite the first main face. The flat object is cooled by a cooling device from the direction of the first main face. On the second main face, a heating device locally acts upon a first partial face in such a way that the flat object is subjected to heat at said first partial face relative to a second partial face adjoining said first partial face in such a way that said first partial face is cooled more slowly in comparison with the second partial face and, during the cooling process, the second main face of the flat object therefore has an inhomogeneous temperature distribution at least in a partial time period of the cooling.

Abstract: A switching device has a substrate, a power semiconductor component arranged thereon, a connection device and a pressure device. The substrate has conductor tracks electrically insulated from each another. A power semiconductor component is arranged on one of the conductor tracks. The connection device is embodied as a film composite having an electrically conductive film and an electrically insulating film and forming a first and a second main surface. The switching device is connected in a circuit-conforming manner by the connection device, and a contact area of the first main surface of the power semiconductor component is connected to a first contact area of an assigned conductor track of the substrate in a force-locking and electrically conductive manner.

Abstract: A switching device has a substrate and a power semiconductor component, comprising a connection device and a pressure device wherein the substrate has tracks electrically insulated from one another. The power semiconductor component is on one of the tracks with a first main surface and is conductively connected thereto. The device is embodied as a film composite having a conductive film and an insulating film that forms a first and a second main surface. The switching device is connected internally in a circuit-conforming manner by the connection device and a contact area of the connection device is connected to a first contact area of one of the tracks in a force-locking and electrically conductive manner. There is a pressure body projecting to the substrate and pressing onto a first section of the second main surface of the film composite.

Abstract: A switching device has a substrate, a connection device and a pressure device, wherein the substrate has electrically insulated conductor tracks, and a power semiconductor component is on one of the conductor tracks with a first main surface and is conductively connected thereto. The connection device is a film composite with conductive film and an insulating film and forms a first and a second main surface. The switching device is connected by the connection device and a contact area of the second main surface of the power semiconductor component is connected to a first contact area of the first main surface of the connection device in a force-locking and electrically conductive manner with a pressure body and a pressure element projecting toward the power semiconductor component.

Abstract: A switching device has a substrate, a connection device and a pressure device, wherein the substrate has electrically insulated conductor tracks, and a power semiconductor component is on one of the conductor tracks with a first main surface and is conductively connected thereto. The connection device is a film composite with conductive film and an insulating film and forms a first and a second main surface. The switching device is connected by the connection device and a contact area of the second main surface of the power semiconductor component is connected to a first contact area of the first main surface of the connection device in a force-locking and electrically conductive manner with a pressure body and a pressure element projecting toward the power semiconductor component.

Abstract: A switching device has a substrate, a power semiconductor component arranged thereon, a connection device and a pressure device. The substrate has conductor tracks electrically insulated from each another. A power semiconductor component is arranged on one of the conductor tracks. The connection device is embodied as a film composite having an electrically conductive film and an electrically insulating film and forming a first and a second main surface. The switching device is connected in a circuit-conforming manner by the connection device, and a contact area of the first main surface of the power semiconductor component is connected to a first contact area of an assigned conductor track of the substrate in a force-locking and electrically conductive manner.

Abstract: A switching device has a substrate and a power semiconductor component, comprising a connection device and a pressure device wherein the substrate has tracks electrically insulated from one another. The power semiconductor component is on one of the tracks with a first main surface and is conductively connected thereto. The device is embodied as a film composite having a conductive film and an insulating film that forms a first and a second main surface. The switching device is connected internally in a circuit-conforming manner by the connection device and a contact area of the connection device is connected to a first contact area of one of the tracks in a force-locking and electrically conductive manner. There is a pressure body projecting to the substrate and pressing onto a first section of the second main surface of the film composite.

Abstract: To monitor an electrode lead composed of two lines in a bipolar HVDCT system, a balanced-to-ground pulse formed from an unbalanced-to-ground pulse in push/pull mode is fed into the lines and an actual echo curve is recorded from the echo signals and compared to a dynamic target echo curve, a fault signal being generated when a tolerance band placed around the echo difference curve is exceeded. In this way, a monitoring method is achieved which is nearly independent of the sharply fluctuating ground conductance, which has a higher range with simultaneously lower dispersion of the echo, which radiates less electromagnetic energy and which requires no additional decoupling elements.