Patents by Inventor Jörg D. Schmid

Jörg D. Schmid has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Eight-transistor static random access memory cell
    Patent number: 11488967
    Abstract: Disclosed are memory structure embodiments including a memory cell and, particularly, an eight-transistor (8T) static random access memory (SRAM) cell with high device density and symmetry. In the 8T SRAM cell, an isolation region is positioned laterally between two semiconductor bodies. Four gate structures traverse the semiconductor bodies. Four p-type transistors, including two p-type pass-gate transistors and two pull-up transistors between the p-type pass-gate transistors, are on one semiconductor body. Four n-type transistors, including two n-type pass-gate transistors and two pull-down transistors between the n-type pass-gate transistors, are on the other. Adjacent p-type and n-type transistors on the different semiconductor bodies share a gate structure.
    Type: Grant
    Filed: March 25, 2021
    Date of Patent: November 1, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Jörg D. Schmid, Nigel Chan
  • EIGHT-TRANSISTOR STATIC RANDOM ACCESS MEMORY CELL
    Publication number: 20220310629
    Abstract: Disclosed are memory structure embodiments including a memory cell and, particularly, an eight-transistor (8T) static random access memory (SRAM) cell with high device density and symmetry. In the 8T SRAM cell, an isolation region is positioned laterally between two semiconductor bodies. Four gate structures traverse the semiconductor bodies. Four p-type transistors, including two p-type pass-gate transistors and two pull-up transistors between the p-type pass-gate transistors, are on one semiconductor body. Four n-type transistors, including two n-type pass-gate transistors and two pull-down transistors between the n-type pass-gate transistors, are on the other. Adjacent p-type and n-type transistors on the different semiconductor bodies share a gate structure.
    Type: Application
    Filed: March 25, 2021
    Publication date: September 29, 2022
    Applicant: GLOBALFOUNDRIES U.S. Inc.
    Inventors: Jörg D. Schmid, Nigel Chan