Abstract: A push-pull device (10) comprises: a first waveguide (W1) arranged between its first and second electrode (S11, S12) and a second waveguide (W2) arranged between its first and a second electrode (S21, S22). Electrically conductive structures (T11, T12, T21, T22) extend away from one or more of the electrodes (S11, S12, S21, S22) for electrically connecting at least two of the electrodes (S11, S12, S21, S22). The waveguides (W1, W2) and the electrodes (S11, S12, S21, S22) originate from a pre-fabrication process. The waveguides (W1, W2) are poled by a poling (P) originating from a poling process.

Abstract: An optoelectronic device (20) includes thin film structures (56) disposed on a semiconductor substrate (54) and patterned to define components of an integrated drive circuit, which is configured to generate a drive signal. A back end of line (BEOL) stack (42) of alternating metal layers (44, 46) and dielectric layers (50) is disposed over the thin film structures. The metal layers include a modulator layer (48), which contains a plasmonic waveguide (36, 99, 105) and a plurality of electrodes (30, 32, 34, 96, 98, 106), which apply a modulation to surface plasmons polaritons (SPPs) propagating in the plasmonic waveguide in response to the drive signal. A plurality of interconnect layers are patterned to connect the thin film structures to the electrodes.

Abstract: A logic circuit, comprises at least two transistors which are configured for providing a logic function, and at least one voltage-controlled threshold switch, which is arranged in at least one of the pull-up path and the pull-down path of at least one of the at least two transistors.

Abstract: A photodetector comprises a substrate, and supported by the substrate, a configuration to act as optical resonator and to absorb incident radiation of a band, including infrared. The configuration comprises: a resonant frontside structure facing the incident radiation; a backside structure and arranged between the frontside structure and the substrate; and a layer of an active material made from a semiconducting material, and configured to convert at least part of the incident radiation of the band into charge carriers. The frontside structure or the backside structure is made from electrically conducting material and is in contact with the active material. The configuration is configured to selectively absorb the incident radiation of the band. The frontside structure or the backside structure that is in contact with the active material is contacted by electrical contacts for sensing the charge carriers in the active material. The active material comprises amorphous or polycrystalline material.

Abstract: Disclosed is an electronic device (1) for converting a wireless signal (2) in the mm-wave or sub-THz range into at least one modulated optical signal (16). The electronic device (1) comprises an antenna element (11) for converting the wireless signal (2) into a guided electrical signal (12), wherein the antenna element (11) is arranged on a printed circuit board (10b?) or on a first integrated chip (10?). The electronic device (1) comprises an electrical signal converter (13) for converting the at least one guided electrical signal (12) into a conditioned electrical signal (14), wherein the electrical signal converter (13) is arranged on a second integrated chip (10?).

Abstract: A push-pull device (10) comprises: a first waveguide (W1) arranged between its first and second electrode (S11, S12) and a second waveguide (W2) arranged between its first and a second electrode (S21, S22). Electrically conductive structures (T11, T12, T21, T22) extend away from one or more of the electrodes (S11, S12, S21, S22) for electrically connecting at least two of the electrodes (S11, S12, S21, S22). The waveguides (W1, W2) and the electrodes (S11, S12, S21, S22) originate from a pre-fabrication process. The waveguides (W1, W2) are poled by a poling (P) originating from a poling process.

Abstract: A terahertz device includes a first waveguide, which is a plasmonic waveguide, having a first core with a nonlinear material, such as a ferroelectric material, and having a cladding with a first cladding portion including, at a first interface with the first core, a first cladding material that is an electrically conductive material. The terahertz device can include an antenna having a first and a second arm (for receiving or for emitting or for both, receiving and emitting electromagnetic waves in the terahertz range); a first and a second electrode arranged close to the first waveguide.

Abstract: Disclosed is a plasmonic device (10), comprising: a substrate (11); and a dielectric layer (13) arranged between a base metal layer (12) and a structured metal layer (14) which form with respect to the substrate (11) a vertical stack of layers, wherein the structured metal layer (14) includes arranged in a horizontal direction an input structure (141) for enabling an input section (21), a waveguide structure (142) for enabling a plasmonic waveguide (22), and an output structure (143) for enabling an output section (23), wherein the input section (21) is configured to receive an optical input signal (31) and transmit input power (41) to the plasmonic waveguide (22), wherein the plasmonic waveguide (22) is configured to receive input power (41) from the input section (21) and transmit output power (43) to the output section (23), and wherein the output section (23) is configured to receive output power (43) from the plasmonic waveguide (22) and transmit an optical output signal (33).

Abstract: A photodetector comprises a substrate, and supported by the substrate, a configuration to act as optical resonator and to absorb incident radiation of a band, including infrared. The configuration comprises: a resonant frontside structure facing the incident radiation; a backside structure and arranged between the frontside structure and the substrate; and a layer of an active material made from a semiconducting material, and configured to convert at least part of the incident radiation of the band into charge carriers. The frontside structure or the backside structure is made from electrically conducting material and is in contact with the active material. The configuration is configured to selectively absorb the incident radiation of the band. The frontside structure or the backside structure that is in contact with the active material is contacted by electrical contacts for sensing the charge carriers in the active material. The active material comprises amorphous or polycrystalline material.

Abstract: An optoelectronic device (20) includes thin film structures (56) disposed on a semiconductor substrate (54) and patterned to define components of an integrated drive circuit, which is configured to generate a drive signal. A back end of line (BEOL) stack (42) of alternating metal layers (44, 46) and dielectric layers (50) is disposed over the thin film structures. The metal layers include a modulator layer (48), which contains a plasmonic waveguide (36, 99, 105) and a plurality of electrodes (30, 32, 34, 96, 98, 106), which apply a modulation to surface plasmons polaritons (SPPs) propagating in the plasmonic waveguide in response to the drive signal. A plurality of interconnect layers are patterned to connect the thin film structures to the electrodes.

Abstract: Disclosed is an electronic device (1) for converting a wireless signal (2) in the mm-wave or sub-THz range into at least one modulated optical signal (16). The electronic device (1) comprises an antenna element (11) for converting the wireless signal (2) into a guided electrical signal (12), wherein the antenna element (11) is arranged on a printed circuit board (10b?) or on a first integrated chip (10?)? The electronic device (1) comprises an electrical signal converter (13) for converting the at least one guided electrical signal (12) into a conditioned electrical signal (14), wherein the electrical signal converter (13) is arranged on a second integrated chip (10?).

Abstract: A terahertz device includes a first waveguide, which is a plasmonic waveguide, having a first core with a nonlinear material, such as a ferroelectric material, and having a cladding with a first cladding portion including, at a first interface with the first core, a first cladding material that is an electrically conductive material. The terahertz device can include an antenna having a first and a second arm (for receiving or for emitting or for both, receiving and emitting electromagnetic waves in the terahertz range); a first and a second electrode arranged close to the first waveguide.

Abstract: An electro-optic element includes a first waveguide, which is a plasmonic waveguide, including a first core having a ferroelectric material and a cladding having a first cladding portion. The first cladding portion includes, at a first interface with the ferroelectric material, a first cladding material. The electro-optic element includes a first and a second electrode for producing an electric field in the ferroelectric material when a voltage is applied between the first and second electrodes, for modulating a real part of a refractive index of the ferroelectric material. The element includes, in addition, a crystalline substrate on which the ferroelectric material is epitaxially grown with zero or one or more intermediate layers present between the substrate and the ferroelectric material. The element may have a second waveguide, which is a photonic waveguide, including for enabling evanescent coupling between the first and second waveguides.

Abstract: An infrared device comprises a substrate (1), and arranged on or in the substrate (1) a configuration (3) for one of selectively emitting and selectively absorbing infrared radiation of a band, the configuration (3) comprising a pattern made from an electrically conducting material on a first level (L1), an electrically conducting film (33) on a second level (L2), and a dielectric layer (24) between the pattern and the film (33). One or more of a heater (4) for heating the configuration (3), and a thermal sensor (5) arranged for sensing the selective infrared radiation of the band absorbed by the configuration (3) on or in the substrate.

Abstract: The present invention relates to plasmonic components, more particularly plasmonic waveguides, and to plasmonic photodetectors that can be used in the field of microoptics and nanooptics, more particularly in highly integrated optical communications systems in the infrared range (IR range) as well as in power engineering, e.g. photovoltaics in the visible range. The present invention also specifies a method for producing a plasmonic component, more particularly for photodetection on the basis of internal photoemission.

Abstract: An infrared device comprises a substrate (1), and arranged on or in the substrate (1) a configuration (3) for one of selectively emitting and selectively absorbing infrared radiation of a band, the configuration (3) comprising a pattern made from an electrically conducting material on a first level (L1), an electrically conducting film (33) on a second level (L2), and a dielectric layer (24) between the pattern and the film (33). One or more of a heater (4) for heating the configuration (3), and a thermal sensor (5) arranged for sensing the selective infrared radiation of the band absorbed by the configuration (3) on or in the substrate.

Abstract: The invention relates to a method and a corresponding apparatus for measuring distance and optionally speed, in particular for multiscale distance measurement.

Abstract: An electro-optic element includes a first waveguide, which is a plasmonic waveguide, including a first core having a ferroelectric material and a cladding having a first cladding portion. The first cladding portion includes, at a first interface with the ferroelectric material, a first cladding material. The electro-optic element includes a first and a second electrode for producing an electric field in the ferroelectric material when a voltage is applied between the first and second electrodes, for modulating a real part of a refractive index of the ferroelectric material. The element includes, in addition, a crystalline substrate on which the ferroelectric material is epitaxially grown with zero or one or more intermediate layers present between the substrate and the ferroelectric material. The element may have a second waveguide, which is a photonic waveguide, including for enabling evanescent coupling between the first and second waveguides.

Abstract: In an integrated optical circuit, light from a light source is polarized and coupled to a first and second strip waveguide. A waveguide coupling element couples the two optical signals from the two strip waveguides to different polarization modes of an optical fiber line. The optical fiber line is connected to a measuring head, which reflects the optical signal and in which a phase difference between the two optical partial signals is modulated in a magnetic field. In the waveguide coupling element, the reflected signal is split into two optical partial signals having the same polarization and the phase difference between the two partial signals is determined. A phase modulator device provides for closed-loop operation. Compared to fiber-optical concepts, the number of splices is reduced.

Abstract: The invention lies in the field of optical metrology and related to optical coherence tomography (OCT). In particular, the invention relates to an apparatus and a method for the depth-dependent adaptation of the dynamic range of an OCT system to the profile of the backscattered power to be measured. The dynamic range of the measuring method can therefore be decoupled from the dynamic range of the analog/digital converter used. The invention is used, in particular, in the characterization of strongly scattering or strongly absorbing biological or technical samples.