Abstract: Separating apparatus, comprising a sedimentation settler and a collection vessel disposed underneath and being in fluid communication with the sedimentation settler, the collection vessel forming a receiving chamber having an outlet at or adjacent to the chamber bottom and having an inlet opening, wherein the collection vessel is arranged such the flow direction of the fluid in the area underneath the sedimentation settler is substantially in line with the direction of the channels of the sedimentation settler.

Abstract: Separating apparatus, comprising a sedimentation settler and a collection vessel disposed underneath and being in fluid communication with the sedimentation settler, the collection vessel forming a receiving chamber having an outlet at or adjacent to the chamber bottom and having an inlet opening, wherein the collection vessel is arranged such the flow direction of the fluid in the area underneath the sedimentation settler is substantially in line with the direction of the channels of the sedimentation settler.

Abstract: Separating apparatus, comprising a sedimentation settler and a collection vessel disposed underneath and being in fluid communication with the sedimentation settler, the collection vessel forming a receiving chamber having an outlet at or adjacent to the chamber bottom and having an inlet opening, wherein the collection vessel is arranged such the flow direction of the fluid in the area underneath the sedimentation settler is substantially in line with the direction of the channels of the sedimentation settler.

Abstract: Separating apparatus, comprising a sedimentation settler and a collection vessel disposed underneath and being in fluid communication with the sedimentation settler, the collection vessel forming a receiving chamber having an outlet at or adjacent to the chamber bottom and having an inlet opening, wherein the collection vessel is arranged such the flow direction of the fluid in the area underneath the sedimentation settler is substantially in line with the direction of the channels of the sedimentation settler.

Abstract: The present invention concerns a stirrer system for animal cell culture consisting of a combination of at least one radially-conveying stirrer element and at least one axially-conveying stirrer element, wherein at least three stirrer elements must be present and the uppermost stirrer element is an axially-conveying stirrer element. The stirrer elements are arranged at a certain distance above one another on a stirrer shaft. A particular embodiment is a multiple stirrer system consisting of two disk stirrers as radially-conveying stirrer elements and an inclined-blade stirrer as an axially-conveying stirrer element wherein the inclined-blade stirrer is arranged above the disk stirrer on the stirrer shaft. The stirrer system according to the invention achieves among others a gentler and better intermixing in the culture of shear-sensitive mammalian cells in cell cultures.

Abstract: Separating apparatus, comprising a sedimentation settler and a collection vessel disposed underneath and being in fluid communication with the sedimentation settler, the collection vessel forming a receiving chamber having an outlet at or adjacent to the chamber bottom and having an inlet opening, wherein the collection vessel is arranged such the flow direction of the fluid in the area underneath the sedimentation settler is substantially in line with the direction of the channels of the sedimentation settler.

Abstract: The present invention concerns a stirrer system for animal cell culture consisting of a combination of at least one radially-conveying stirrer element and at least one axially-conveying stirrer element, wherein at least three stirrer elements must be present and the uppermost stirrer element is an axially-conveying stirrer element. The stirrer elements are arranged at a certain distance above one another on a stirrer shaft. A particular embodiment is a multiple stirrer system consisting of two disk stirrers as radially-conveying stirrer elements and an inclined-blade stirrer as an axially-conveying stirrer element wherein the inclined-blade stirrer is arranged above the disk stirrer on the stirrer shaft. The stirrer system according to the invention achieves among others a gentler and better intermixing in the culture of shear-sensitive mammalian cells in cell cultures.

Abstract: Separating apparatus, comprising a sedimentation settler and a collection vessel disposed underneath and being in fluid communication with the sedimentation settler, the collection vessel forming a receiving chamber having an outlet at or adjacent to the chamber bottom and having an inlet opening, wherein the collection vessel is arranged such the flow direction of the fluid in the area underneath the sedimentation settler is substantially in line with the direction of the channels of the sedimentation settler.

Abstract: The present invention concerns a stirrer system for animal cell culture consisting of a combination of at least one radially-conveying stirrer element and at least one axially-conveying stirrer element, wherein at least three stirrer elements must be present and the uppermost stirrer element is an axially-conveying stirrer element. The stirrer elements are arranged at a certain distance above one another on a stirrer shaft. A particular embodiment is a multiple stirrer system consisting of two disk stirrers as radially-conveying stirrer elements and an inclined-blade stirrer as an axially-conveying stirrer element wherein the inclined-blade stirrer is arranged above the disk stirrer on the stirrer shaft. The stirrer system according to the invention achieves among others a gentler and better intermixing in the culture of shear-sensitive mammalian cells in cell cultures.

Abstract: Embodiments of the invention include a method for generating a model layout for the manufacturing of a transfer device, the method including: providing transfer structures associated to reference structures and the transfer structures representing structures to be directly or indirectly generated on the substrate; generating images from the transfer structures using transfer functions; superimposing the images, thereby generating a candidate model layout; determining as to whether the candidate model layout fulfills a predefined criterion; and using the candidate model layout as the model layout in case the predefined criterion is fulfilled.

Abstract: System and method of correcting etch and lithographic processes on a photo mask provides for performing an etch proximity correction on a layout design pattern. A first and a second intermediate layout pattern each being based on the etch proximity corrected layout design pattern are provided. An optical proximity correction on the first intermediate layout pattern is performed so as to generate a modified first intermediate layout pattern. Scatterbar generation on the second intermediate layout pattern is performed so as to generate a modified second intermediate layout pattern including scatterbars. Generating a mask layout pattern being based on the first and the second modified intermediate layout pattern is performed.

Abstract: A set of at least two masks, coordinated with one another, for the projection of structure patterns, into the same photosensitive layer arranged on a semiconductor wafer. The first mask includes a semitransparent or nontransparent first layer, which is arranged on a first substrate and in which at least one first opening is formed at a first position, the first opening having a first lateral dimension, which is greater than the resolution limit of a projection system for the projection of the structure patterns. The second mask includes a semitransparent or nontransparent second layer, which is arranged on a second substrate and in which at least one dummy structure assigned to the first opening is formed at a second position, the dummy structure having a second lateral dimension, which is smaller than the resolution limit of the projection system wherein the first position on the first mask corresponds to the second position on the second mask.

Abstract: A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer, in which the set of at least two masks includes a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away for enlargement of a process window during exposure of the photosensitive layer on the semiconductor wafer.

Abstract: A lithography mask has an angled structure element (O) formed by a first opaque segment (O1) and by a second opaque segment (O2). The structure element has at least one reflex angle (?). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (?). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T1, T2) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.

Abstract: An imaging system having a dipole diaphragm (2) having two diaphragm openings (2b) arranged one behind the other in a dipole axis (y), and a mask having mask structures (20, 23) is used for producing semiconductor structures (10?, 13?) on a wafer (15?) by imaging the mask (25) onto the wafer (15?). The dipole diaphragm (2) is provided for the imaging of the mask (25), and the mask (25), for producing main semiconductor structures (10; 10?) on the wafer (15?), has main mask structures (20) parallel to an imaging axis (x) running perpendicular to the dipole axis (y). At least one connecting mask structure (23?) oriented obliquely with respect to the dipole axis (y) at least in sections is formed on the mask (25), which structure connects at least two main mask structures (20) to one another.

Abstract: A method is used to produce semiconductor patterns (10?, 13?) on a wafer (15?). For this purpose, a mask (25) and a dipole aperture (2) with two aperture openings (2b) arranged behind one another in a dipole axis (y) are used. The mask (25) is imaged on the wafer (15?) by means of the dipole aperture (2) and, by the imaging of the mask (25) on the wafer (15?), main semiconductor patterns (10?) are produced which are aligned perpendicularly to the dipole axis (y) and in parallel with an imaging axis (x). A second mask (35) with at least one connecting mask pattern (33) is imaged on the wafer (15?) by means of a second aperture (6), as a result of which a connecting semiconductor pattern (13) is produced on the wafer (15?), by means of which at least two of the main semiconductor patterns (10?) are connected to one another.

Abstract: A method of producing a layout for a mask for use in semiconductor production includes a two-stage, iterative optimization of the position of scatter bars in relation to main structures being carried out. In a first stage, following first production of scatter bars and carrying out an OPC, scatter bars are again generated based on the corrected main structures. A renewed OPC is then carried out, followed by the renewed formation of scatter bars. This is repeated until the layout has been optimized sufficiently. Then, in the second stage, defocused exposure of the layout is simulated and, if required, further adaptation of the scatter bars is carried out. The first and second iterative stages can also be employed independently of each other. The common factor in the iterations is that the scatter bar positions are varied with each iteration and is therefore optimized.

Abstract: A mask contains a transparent carrier material on which an opaque region is disposed as an image structure. Also disposed on the carrier material is a semitransparent dummy structure, which is spaced apart from all the image structures and differs from the image structure in terms of transparency and phase rotation. The smallest lateral extent of the dummy structure is then selected to be at least half as large as the smallest lateral extent of the image structure. The semitransparent dummy structure is formed in such a way that it is suitable for increasing the depth of focus of structures that stand individually or at least partially individually, in order thereby to improve the process window of the optical projection.

Abstract: A method for installing protective components in integrated circuits constructed from standard cells includes reserving sufficient space in the standard cells for at least one protective component, wiring the standard cells and determining which standard cells require a protective component and inserting at least one protective component into the standard cells. A place marker can mark the space required for a protective component in the integrated circuit layout. The protective component can be a protective diode. Protective component connections can be provided in the standard cells. The standard cells can be gate arrays.

Abstract: Masks are produced for the fabrication of semiconductor structures based on layout data that has information for defining a mask layout with individual geometric structure elements. Layout data generated previously for a mask layout is checked to see whether geometric design requirements are satisfied. In the event of a violation of design requirements, the corresponding error locations in the mask layout are located. Further layout data are then generated, which contain information for defining correction figures to correct the respective error locations. The further layout data are linked with the layout data, so that the layout data are modified. This permits automated modification of the layout data and their technology-dependent optimization.