Abstract: A circuit arrangement for a current converter has a half bridge with two series-connected power semiconductor switches in each case. The half bridge has a module with a power semiconductor switch in each case, a first DC voltage terminal, a second DC voltage terminal and an AC voltage terminal. A capacitor is connected in parallel with the half bridge and has a first and second capacitor terminals. A first busbar connects the first DC voltage terminal to the first capacitor terminal, and a second busbar connects the second DC voltage terminal to the second capacitor terminal. The first and the second busbars are arranged as to be spatially parallel and electrically insulated from each other. The circuit arrangement has a resistor connected in series with the capacitor, wherein the resistor is arranged in the first and/or second busbar.

Abstract: A modular power converter with wide-bandgap semiconductors, in particular SiC semiconductors. The modular power converter has at least two base units. The base units are connected together on the input side, and each base unit has an input circuit on the input side and an output circuit on the output side. The input circuit and the output circuit are each formed by the wide-bandgap semiconductors arranged in a B6-bridge circuit. An intermediate circuit capacitor is connected in parallel with the input circuit and the output circuit forming an intermediate circuit. The input circuits of the base units or a sub-quantity of the base units are arranged in a series circuit. At least one inductor is arranged between each pair of input circuits.

Abstract: The invention relates to a method and an actuation assembly (3) for actuating a MOSFET (1), in particular a MOSFET (1) based on a semiconductor with a wide band gap. According to the invention, a characteristic block is generated in which a change (?U1, ?U2, ?R1, ?R2) in at least one actuation variable (U1, U2, R1, R2) for actuating the MOSFET (1) with respect to a reference actuation value of the actuation variable (U1, U2, R1, R2) is stored on the basis of at least one operating characteristic variable (U, T) which influences the switching behavior of the MOSFET (1), said change counteracting a change in the switching behavior as a result of the at least one operating characteristic variable (U, T).

Abstract: The invention relates to a method and an actuating arrangement for controlling a MOSFET, in particular wide-bandgap MOSFET. A change of an actuating variable, which actuates the MOSFET as a function of an operating characteristic variable that influences the switching behavior of the MOSFET is stored in a characteristic block. The change counteracts a reference actuating value of the actuating variable. An actual value of the operating characteristic variable is determined during operation of the MOSFET, The actuating variable is changed from the reference actuating value as a function of the actual value commensurate with the change of the actuating variable stored in the characteristic block. The change stored in the characteristic block can include a change in the switch-on or switch-off voltage or gate resistance of the MOSFET as a function of the operating temperature or the operating voltage of the MOSFET.

Abstract: A modular power converter with wide-bandgap semiconductors, in particular SiC semiconductors. The modular power converter has at least two base units. The base units are connected together on the input side, and each base unit has an input circuit on the input side and an output circuit on the output side. The input circuit and the output circuit are each formed by the wide-bandgap semiconductors arranged in a B6-bridge circuit. An intermediate circuit capacitor is connected in parallel with the input circuit and the output circuit forming an intermediate circuit. The input circuits of the base units or a sub-quantity of the base units are arranged in a series circuit. At least one inductor is arranged between each pair of input circuits.

Abstract: With a method and an actuation arrangement for actuating a MOSFET, in particular a wide-bandgap semiconductor MOSFET, a monitoring process is performed to determine whether the body diode of the MOSFET is electrically conducting or blocking. If the body diode is electrically conducting, the MOSFET is activated, and if the body diode is electrically blocking, the MOSFET is actuated in response to an actuation signal generated based on the drain-source voltage and the direction and intensity of the drain-source current of the MOSFET.

Abstract: A control device for driving a bipolar switchable power semiconductor component is designed to apply an electrical voltage to a gate terminal of the power semiconductor component and to reduce the electrical voltage for turning off the power semiconductor component from a first voltage value to a second voltage value. The control device is designed, for turning off the power semiconductor component, firstly to reduce the electrical voltage from the first voltage value to a desaturation value and then to reduce the electrical voltage from the desaturation value to the second voltage value. The desaturation value is greater than a pinch-off voltage of the power semiconductor component.

Abstract: A control device for driving a bipolar switchable power semiconductor component is designed to apply an electrical voltage to a gate terminal of the power semiconductor component and to reduce the electrical voltage for turning off the power semiconductor component from a first voltage value to a second voltage value. The control device is designed, for turning off the power semiconductor component, firstly to reduce the electrical voltage from the first voltage value to a desaturation value and then to reduce the electrical voltage from the desaturation value to the second voltage value. The desaturation value is greater than a pinch-off voltage of the power semiconductor component.

Abstract: A busbar arrangement for making electrical contact with a semiconductor module includes at least two busbars overlapping in an overlap region and electrically insulated from one another. Each busbar includes a web having a connection element, with the webs of the busbars being arranged without an overlap. The webs are oriented such as to define a first axis which runs through the connection element of an associated one of the webs and a point of a transition of the web to the overlap region of the busbar arrangement, and which intersects a second axis which is formed by a connection between two connection elements of the webs at an angle between 0° and 45°. The busbar arrangement includes an insulating region to reduce or prevent a current in the web in a direction perpendicular to the second axis. The overlap region and the webs are each located in one plane.

Abstract: A phase module for a power converter includes first and second busbars and at least two semiconductor modules. The first busbar is connected to AC voltage connections of the semiconductor modules. The second busbar is connected to DC voltage connections of the semiconductor modules. At least one section of the first and second busbars is arranged at a distance to one another, the value of which is less than half the value of the distance between the AC voltage connection and the DC voltage connection of one of the semiconductor modules. At least one of the busbars has a separator arranged at a right angle on the remaining part of the busbar and connecting the busbar to at least one of the DC voltage connections or one of the AC voltage connections of one of the semiconductor modules. The separator is arranged along a surface of the one semiconductor module.

Abstract: A busbar arrangement for making electrical contact with a semiconductor module includes at least two busbars overlapping in an overlap region and electrically insulated from one another. Each busbar includes a web having a connection element, with the webs of the busbars being arranged without an overlap. The webs are oriented such as to define a first axis which runs through the connection element of an associated one of the webs and a point of a transition of the web to the overlap region of the busbar arrangement, and which intersects a second axis which is formed by a connection between two connection elements of the webs at an angle between 0° and 45°. The busbar arrangement includes an insulating region to reduce or prevent a current in the web in a direction perpendicular to the second axis. The overlap region and the webs are each located in one plane.