Abstract: An arrangement of at least two adjacently arranged layer structures is provided for a magnetoresistive magnetic field sensor. Each layer structure has at least one antiferromagnetic layer, and a first ferromagnetic layer with a first magnetic moment. Exchange coupling is present between the antiferromagnetic layer and the first ferromagnetic layer. A second ferromagnetic layer with a second magnetic moment is included, wherein the second ferromagnetic layer is antiparallel coupled to the first ferromagnetic layer via a non-magnetic coupling layer arranged between the first and second ferromagnetic layers. The magnetisation of the corresponding first and corresponding second ferromagnetic layers of the adjacently arranged layer structures differs from one another, and in particular is of substantially mutually opposed orientation.

Abstract: An arrangement of at least two adjacently arranged layer structures is provided for a magnetoresistive magnetic field sensor. Each layer structure has at least one antiferromagnetic layer, and a first ferromagnetic layer with a first magnetic moment. Exchange coupling is present between the antiferromagnetic layer and the first ferromagnetic layer. A second ferromagnetic layer with a second magnetic moment is included, wherein the second ferromagnetic layer is antiparallel coupled to the first ferromagnetic layer via a non-magnetic coupling layer arranged between the first and second ferromagnetic layers. The magnetisation of the corresponding first and corresponding second ferromagnetic layers of the adjacently arranged layer structures differs from one another, and in particular is of substantially mutually opposed orientation.

Abstract: A method and an apparatus are for the permanent magnetization of at least one ferromagnetic layer in a magnetic field sensor device deposited on a chip substrate. The method includes production of at least one resistance element on a chip substrate, deposition of at least one soft magnetic structuring element on the chip substrate; heating of the resistance element to above the blocking temperature and coupling of a preconditioning magnetic field; cooling of the resistance element to below the blocking temperature; and removal of the preconditioning magnetic field. The soft magnetic structuring element is arranged such that the coupled preconditioning magnetic field penetrates the structuring element substantially perpendicular to the chip surface and, at the location of the resistance element, generates magnetic field components parallel to the chip surface which penetrate the ferromagnetic layer of the resistance element at least in some areas.

Abstract: A method and an apparatus are for the permanent magnetisation of at least one ferromagnetic layer in a magnetic field sensor device deposited on a chip substrate. The method includes production of at least one resistance element on a chip substrate, deposition of at least one soft magnetic structuring element on the chip substrate; heating of the resistance element to above the blocking temperature and coupling of a preconditioning magnetic field; cooling of the resistance element to below the blocking temperature; and removal of the preconditioning magnetic field. The soft magnetic structuring element is arranged such that the coupled preconditioning magnetic field penetrates the structuring element substantially perpendicular to the chip surface and, at the location of the resistance element, generates magnetic field components parallel to the chip surface which penetrate the ferromagnetic layer of the resistance element at least in some areas.