Abstract: The invention concerns a method for the production of single crystal aluminium nitride doped with scandium and/or yttrium, with scandium and/or yttrium contents in the range 0.01 atom % to 50 atom % with respect to 100 atom % of the total quantity of the doped aluminium nitride, characterized in that in a crucible, in the presence of a gas selected from nitrogen or a noble gas, or a mixture of nitrogen and a noble gas: a doping material selected from scandium, yttrium, scandium nitride or yttrium nitride or a mixture thereof and a source material formed from aluminium nitride are sublimated and recondensed onto a seed material which is selected from aluminium nitride or aluminium nitride doped with scandium and/or yttrium.

Abstract: A process produces a crystal of a material with non-congruent melting using at least one first element and a second element. The process includes (a) placing, in a vertical alignment and maintaining under a controlled atmosphere, a bar of the first element gripped between a lower bar and an upper bar made out of the material, (b) transforming the bar of the first element into a floating zone by heating to a temperature that avoids the evaporation of the first element, the heating being obtained by heating means that provides a temperature gradient in the floating zone so that the lower face of the upper bar appears as a cold face, and (c) contra-rotating the lower and upper bars around the alignment axis and moving the whole bar assembly upwards in relation to the heating means in order to obtain the crystal on the cold face by growth in solution.