Abstract: Embodiments relate to magnetoresistive sensors suitable for both angle and field strength sensing. In an embodiment, a sensor comprises two different magnetoresistive (xMR) sensor components for sensing two different aspects or characteristics of a magnetic field. In an embodiment, the first xMR sensor component is configured for magnetic field angle or rotation sensing, while the second xMR sensor component is configured for magnetic field strength sensing. In an embodiment, the second xMR sensor component is configured for magnetic field strength sensing in two dimensions. The second xMR sensor therefore can determine, in embodiment, whether the field sensed with respect to angle or rotation by the first xMR sensor component is of sufficient strength or meets a minimum magnitude threshold. If the minimum threshold is not met, an alarm or alert can be provided.

Abstract: Some aspects described herein involve a multi-turn counter (MTC) system that includes a first MTC sensor configured to sense a rotating magnetic field coupled to a rotatable object. The first MTC sensor may have a first sense of rotation detection. The MTC system may include a second MTC sensor may be configured to sense the rotating magnetic field. The second MTC sensor may have a second sense of rotation detection which is opposite to the first sense of rotation detection, and the second MTC sensor is configured to sense the rotating magnetic field according to the second sense of rotation.

Abstract: An angle sensor may include a first sensing element to provide a first set of output signals associated with a magnetic field produced by a rotatable magnet. The first sensing element may be arranged at a first distance from a surface of the rotatable magnet along a given direction, and may be configured to operate in a non-saturated mode. The angle sensor may include a second sensing element to provide a second set of output signals associated with the magnetic field produced by the rotatable magnet. The second sensing element may be arranged at a second distance from the surface of the rotatable magnet along the given direction, and may be configured to operate in a non-saturated mode.

Abstract: A magnetoresistive sensor includes a first non-magnetic layer, a second non-magnetic layer, and a magnetic free bi-layer. The magnetic free bi-layer is disposed between first non-magnetic layer and the second non-magnetic layer, the magnetic free bi-layer including a first magnetic free layer coupled to a second magnetic free layer. The first magnetic free layer is coupled to the first non-magnetic layer, and the second magnetic free layer is coupled to the second non-magnetic layer. The second non-magnetic layer comprises a non-magnetic material having an atomic radius within 10% of an atomic radius of at least one of the first magnetic free layer and the second magnetic free layer.

Abstract: A bridge circuit having a full-bridge circuit having a first branch and a second branch coupled in parallel, the first branch comprising a first half-bridge circuit and a first tunnel magnetoresistance (TMR) resistor cascade coupled in series, and the second branch comprising a second half-bridge circuit and a second TMR resistor cascade coupled in series, wherein the full-bridge circuit has an offset voltage of zero or substantially close to zero.

Abstract: Some aspects described herein involve a multi-turn counter (MTC) system that includes a first MTC sensor configured to sense a rotating magnetic field coupled to a rotatable object. The first MTC sensor may have a first sense of rotation detection. The MTC system may include a second MTC sensor may be configured to sense the rotating magnetic field. The second MTC sensor may have a second sense of rotation detection which is opposite to the first sense of rotation detection, and the second MTC sensor is configured to sense the rotating magnetic field according to the second sense of rotation.

Abstract: A sensor circuit includes a plurality of half-bridge sensor circuits. The sensor circuit includes a sensor output value determination circuit configured to determine a sensor output value. The sensor circuit further includes an error determination circuit configured to generate an error signal based on a first half-bridge sensor signal and a second half-bridge sensor signal. The sensor circuit further includes a control circuit configured to control a selection of one of the first half-bridge sensor circuit and the second half-bridge sensor circuit for providing one of the first half-bridge sensor signal and the second half-bridge sensor signal to the sensor output value determination circuit to determine the sensor output value.

Abstract: A sensor circuit includes a plurality of half-bridge sensor circuits. The sensor circuit includes a sensor output value determination circuit configured to determine a sensor output value. The sensor circuit further includes an error determination circuit configured to generate an error signal based on a first half-bridge sensor signal and a second half-bridge sensor signal. The sensor circuit further includes a control circuit configured to control a selection of one of the first half-bridge sensor circuit and the second half-bridge sensor circuit for providing one of the first half-bridge sensor signal and the second half-bridge sensor signal to the sensor output value determination circuit to determine the sensor output value.

Abstract: An example multi-turn counter (MTC) sensor includes a magnetic strip that includes a domain wall generator located at a first end of the magnetic strip, where the domain wall generator is to generate at least one domain wall in the magnetic strip, the at least one domain wall configured to propagate based on a magnetic field caused by a magnet; wherein a location of the at least one domain wall indicates a turn count of the magnetic field of the magnet; the turn count to indicate one or more of a predefined fraction of a full rotation of the magnetic field; an end tip located at a second end of the magnetic strip, where the second end of the magnetic strip is opposite the first end; and a plurality of overlapping strip turns that cause a plurality of crossings in the magnetic strip.

Abstract: A magnetic angle sensor including a first Wheatstone bridge circuit having a plurality of first magnetoresistive elements; and a second Wheatstone bridge circuit having a plurality of second magnetoresistive elements, wherein the plurality of second magnetoresistive elements have diversity with respect to the plurality of first magnetoresistive elements.

Abstract: A magnetoresistive sensor includes a magnetic reference layer. The magnetic reference layer includes a permanent closed flux magnetization pattern of a predetermined rotational direction. Furthermore, the magnetoresistive sensor includes a magnetic free layer. The magnetic free layer has a total lateral area that is smaller than a total lateral area of the magnetic reference layer. A centroid of the magnetic free layer is laterally displaced with respect to a centroid of the magnetic reference layer.

Abstract: A magnetic angle sensor including a first Wheatstone bridge circuit having a plurality of first magnetoresistive elements; and a second Wheatstone bridge circuit having a plurality of second magnetoresistive elements, wherein the plurality of second magnetoresistive elements have diversity with respect to the plurality of first magnetoresistive elements.

Abstract: Embodiments relate to magnetoresistive sensors suitable for both angle and field strength sensing. In an embodiment, a sensor comprises two different magnetoresistive (xMR) sensor components for sensing two different aspects or characteristics of a magnetic field. In an embodiment, the first xMR sensor component is configured for magnetic field angle or rotation sensing, while the second xMR sensor component is configured for magnetic field strength sensing. In an embodiment, the second xMR sensor component is configured for magnetic field strength sensing in two dimensions. The second xMR sensor therefore can determine, in embodiment, whether the field sensed with respect to angle or rotation by the first xMR sensor component is of sufficient strength or meets a minimum magnitude threshold. If the minimum threshold is not met, an alarm or alert can be provided.

Abstract: An angle sensor may include a first sensing element to provide a first set of output signals associated with a magnetic field produced by a rotatable magnet. The first sensing element may be arranged at a first distance from a surface of the rotatable magnet along a given direction, and may be configured to operate in a non-saturated mode. The angle sensor may include a second sensing element to provide a second set of output signals associated with the magnetic field produced by the rotatable magnet. The second sensing element may be arranged at a second distance from the surface of the rotatable magnet along the given direction, and may be configured to operate in a non-saturated mode.

Abstract: An angle sensor may comprise a first primary sensing element and a second primary sensing element. The first primary sensing element may be positioned adjacent to the second primary sensing element in a plane substantially parallel with respect to a face of a magnet. The angle sensor may comprise a first auxiliary sensing element and a second auxiliary sensing element. The first primary sensing element and the second primary sensing element may be positioned between the first auxiliary sensing element and the second auxiliary sensing element in the plane substantially parallel with respect to the face of the magnet.

Abstract: A magnetoresistive sensor may include a stripe portion comprising magnetoresistive material. The stripe portion may have a stripe width extending along a first axis from a first stripe edge of the stripe portion to a second stripe edge of the stripe portion, a length along a second axis that is substantially perpendicular to the first axis, a first end, and a second end. The first end and the second end may be positioned at opposite ends of the stripe portion along the second axis. The magnetoresistive sensor may include an extension portion comprising magnetoresistive material. The extension portion may be positioned at the first end of the stripe portion, and may have an extension width along the first axis. The extension width may be larger than the stripe width, such that the extension portion extends beyond the first stripe edge and the second stripe edge.

Abstract: Sensing systems can include magnetoresistive sensors suitable for both angle and field strength sensing. The system can include one or more magnetoresistive sensors that can sense one or more aspects or characteristics of a magnetic field. The system can include a first magnetoresistive sensor that is configured to sense the magnetic field angle or rotation and a second sensor configured to sense the strength or magnitude of the magnetic field. The system can determine an operation state of the system based on the sensed characteristic(s) of the magnetic field. For example, if the system determines that the sensed magnetic field strength is below a threshold value, the system can determine that it may be operating in an error state. In this example, the system can generate an alarm signal based on the determined error state.

Abstract: A bridge circuit having a full-bridge circuit having a first branch and a second branch coupled in parallel, the first branch comprising a first half-bridge circuit and a first tunnel magnetoresistance (TMR) resistor cascade coupled in series, and the second branch comprising a second half-bridge circuit and a second TMR resistor cascade coupled in series, wherein the full-bridge circuit has an offset voltage of zero or substantially close to zero.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: A milling burr for use in handheld machines has a shank and a cutting member of hard metal which is rigidly connected to said shank. The cutting member is provided with cutting teeth which extend in a first direction of twist. The cutting teeth are divided in cutting tooth portions by rows of tooth dividers extending in a second direction of twist. The cutting tooth portions and the tooth dividers are arranged one behind the other when seen in the peripheral direction in such a way that an overlap occurs in an in each case alternating manner when seen in the peripheral direction.