Abstract: The present invention relates to an organic light emitting diode comprising a non-transparent substrate, an anode, a cathode, an emission layer, an electron injection layer and an electron transport layer stack; and to a display device or lighting device comprising the same.

Abstract: The present invention relates to an organic electronic device comprising an electron injection layer and to a compound suitable for use therein.

Abstract: The present invention is directed to an organic light emitting diode (100) comprising: at least one anode electrode (120); at least one emission layer (150), wherein the emission layer comprises at least one emitter dopant that emits visible light at operation of the OLED (100); an electron transport layer stack (160) of at least two electron transport layers (161/162), and wherein a) the first electron transport layer (161) comprises i) a first organic aromatic matrix compound having a MW of about ?400 to about ?1000 and a dipole moment of about ?0 Debye and about ?2.5 Debye, wherein the first electron transport layer (161) is free of a polar organic aromatic phosphine compound; and b) the second electron transport layer (162) comprises two organic aromatic matrix compounds, which are a mixture of: i) the first organic aromatic matrix compound; and ii) a polar organic aromatic phosphine compound having a MW of about ?400 to about ?1000, and a dipole moment of about >2.

Abstract: The present invention relates to an organic light emitting diode comprising a non-transparent substrate, an anode, a cathode, an emission layer, an electron injection layer and an electron transport layer stack; and to a display device or lighting device comprising the same.

Abstract: The present invention relates to an organic light emitting diode comprising an anode, a cathode, a first emission layer, a second emission layer, a first charge generation layer and a first electron transport layer stack; and to a display device or lighting device comprising the same.

Abstract: The present invention is directed to an ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: —at least one p-type dopant comprising electron withdrawing groups; —at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has about ?1 to about ?3 nitrile groups and a melting point of about <100° C., wherein the first auxiliary compound is different from the p-type dopant; and wherein the electron withdrawing groups are fluorine, chlorine, bromine and/or nitrile.

Abstract: Hie present invention relates to an organic light emitting diode comprising an anode, a cathode, a first emission layer, a second emission layer, a first charge generation layer and a first electron transport layer stack; and to a display device or lighting device comprising the same.

Abstract: The present invention relates to an organic light emitting diode comprising an anode, a cathode, a first emission layer, a second emission layer, a first charge generation, layer and a first electron transport layer stack; and to a display device or lighting device comprising the same.

Abstract: The present invention relates to an organic electroluminescent device comprising an anode, a cathode, an emission layer, an undoped electron transport layer comprising a first matrix compound, and an electron injection layer comprising a second matrix compound and an alkali organic complex and/or alkali halide, wherein the undoped electron transport layer and the electron injection layer are arranged between the emission layer and the cathode, wherein the reduction potential of the first matrix compound is less negative than, the reduction potential of 9,10-di(naphthalen-2-yl)anthracene and more negative than the reduction potential of 4,4?-bis(4,6-diphenyl-1,3,5-triazin-2-yl)biphenyl, wherein the reduction potential in both cases is measured against Fc/Fc+ in tetrahydrofurane; and the dipole moment of the first matrix compound is selected ?0 Debye and ?2.5 Debye and the dipole moment of the second matrix compound is selected >2.5 and <10 Debye.

Abstract: The present invention relates to an organic electroluminescent device, particularly to an organic light emitting diode (OLED) including an ETL stack of at least two electron transport layers, wherein the first electron transport layer comprises a first electron transport matrix compound and the second electron transport layer comprises second electron transport matrix compound and a redox n-dopant, and a device comprising the OLED.

Abstract: Electronic devices and methods for preparing electronic devices. Electronic devices may include a semiconducting layer, which may include at least one borate complex. Borate complex may include a metal, such as Ca or Sr, and at least one borate ligand. Borate ligands may include a heterocyclic group. Methods may include evaporating a borate complex.

Abstract: The present invention relates to a compound of the Formula (I) wherein at least one of R1 to R10 and/or Ar4 is a group having the Formula (II) wherein the asterisk symbol “*” in Formula (II) represents the position of binding of the group having the Formula (II); L is selected from substituted or unsubstituted C6 to C18 arylene; Ar1 is selected from substituted or unsubstituted C3 to C24 heteroaryl, wherein the heteroaryl comprises at least two N-atoms; Ar2 and Ar3 are independently selected from substituted or unsubstituted C6 to C24 aryl and/or substituted or unsubstituted C4 to C24 heteroaryl, wherein Ar2 and Ar3 are selected differently from each other; Ar4 is selected from the group consisting of substituted or unsubstituted C1 to C16 alkyl, substituted or unsubstituted C6 to C24 aryl, substituted or unsubstituted C2 to C24 heteroaryl and a group having the general Formula (II); R1 to R10 are independently selected from the group consisting of H, D, F, C1 to C20 alkyl, C6 to C20 aryl, C2 to C20

Abstract: The present invention relates to acridine compound of formula structure (I), and to an electron transport layer, which comprises at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) as well as to an electronic device comprising a semiconductor layer thereof.

Abstract: The present invention is directed to an organic light emitting diode (100) comprising: at least one anode electrode (120); at least one emission layer (150), wherein the emission layer comprises at least one emitter dopant that emits visible light at operation of the OLED (100); an electron transport layer stack (160) of at least two electron transport layers (161/162), and wherein a) the first electron transport layer (161) comprises i) a first organic aromatic matrix compound having a MW of about ?400 to about ?1000 and a dipole moment of about ?0 Debye and about ?2.5 Debye, wherein the first electron transport layer (161) is free of a polar organic aromatic phosphine compound; and b) the second electron transport layer (162) comprises two organic aromatic matrix compounds, which are a mixture of: i) the first organic aromatic matrix compound; and ii) a polar organic aromatic phosphine compound having a MW of about ?400 to about ?1000, and a dipole moment of about >2.

Abstract: The present invention is directed to an organic light emitting diode (100) comprising: at least one anode electrode (120); at least one emission layer (150), wherein the emission layer comprises at least one emitter dopant that emits visible light at operation of the OLED (100); an electron transport layer stack (160) of at least two electron transport layers (161/162), and wherein a) the first electron transport layer (161) comprises i) a first organic aromatic matrix compound having a MW of about ?400 to about ?1000 and a dipole moment of about ?0 Debye and about ?2.5 Debye, wherein the first electron transport layer (161) is free of a polar organic aromatic phosphine compound; and b) the second electron transport layer (162) comprises two organic aromatic matrix compounds, which are a mixture of: i) the first organic aromatic matrix compound; and ii) a polar organic aromatic phosphine compound having a MW of about ?400 to about ?1000, and a dipole moment of about >2.

Abstract: The present invention is directed to an organic light emitting diode (100) comprising: at least one anode electrode (120); at least one emission layer (150), wherein the emission layer comprises at least one emitter dopant that emits visible light at operation of the OLED (100); an electron transport layer stack (160) of at least two electron transport layers (161/162), and wherein a) the first electron transport layer (161) comprises i) a first organic aromatic matrix compound having a MW of about ?400 to about ?1000 and a dipole moment of about ?0 Debye and about ?2.5 Debye, wherein the first electron transport layer (161) is free of a polar organic aromatic phosphine compound; and b) the second electron transport layer (162) comprises two organic aromatic matrix compounds, which are a mixture of: i) the first organic aromatic matrix compound; and ii) a polar organic aromatic phosphine compound having a MW of about ?400 to about ?1000, and a dipole moment of about >2.

Abstract: The present invention relates to a semiconducting material comprising: (i) at last one metal complex or metal salt comprising a divalent metal; and (ii) at least one matrix compound comprising a dialkylphospMne oxide group, an electronic device comprising the same and a method for preparing the same.

Abstract: The present invention relates to an electronic device comprising between an semiconducting layer comprising a borate complex comprising a metal selected from Ca and Sr and at least one borate ligand, wherein the borate ligand comprises at least one heterocyclic group and a method for preparing the same.

Abstract: Process for preparing a metal containing layer, the process comprising (i) at least one step of co-vaporization, at a pressure which is lower than 10?2 Pa, of a) at least one first metal selected from Li, Na, K, Rb and Cs and b) at least one second metal selected Mg, Zn, Hg, Cd and Te from a metal alloy provided in a first vaporization source which is heated to a temperature between 100° C. and 600° C., and (ii) at least one subsequent step of deposition of the first metal on a surface having a temperature which is below the temperature of the first vaporization source, wherein in step (i), the alloy is provided at least partly in form of a homogeneous phase comprising the first metal and the second metal, electronic devices comprising such materials and process for preparing the same.

Abstract: The present invention relates to a semiconducting material comprising (i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound, (ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and (iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te, electronic devices comprising such materials and processes for preparing the same.