Patents by Inventor J. Russell Terry

J. Russell Terry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer
    Patent number: 9515211
    Abstract: A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm?3 to about 5×1018 cm?3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm?3 to about 5×1015 cm?3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: December 6, 2016
    Assignee: University of South Carolina
    Inventors: Krishna C. Mandal, J. Russell Terry
  • Schottky Barrier Detection Devices Having a 4H-SiC n-Type Epitaxial Layer
    Publication number: 20150028353
    Abstract: A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm?3 to about 5×1018 cm?3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm?3 to about 5×1015 cm?3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.
    Type: Application
    Filed: July 28, 2014
    Publication date: January 29, 2015
    Inventors: Krishna C. Mandal, J. Russell Terry