Abstract: An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (AlxGa1−x)InP, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (GaxAl1−x)yIn1−yP that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of GaxAl1−xAs that are epitaxially grown on the multi quantum well active gain region.

Abstract: An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (AlxGa1−x)Inp, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (GaxAl1−x)yIn1−yP that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of GaxAl1−xAs that are epitaxially grown on the multi quantum well active gain region.

Abstract: An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (AlxGa1-x)InP, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (GaxAl1-x)yIn1-yP that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of GaxAl1-xAs that are epitaxially grown on the multi quantum well active gain region.

Abstract: A laser activated switch includes a substrate, such as a sapphire or a silicon carbide substrate, with two opposed major surfaces including a ground layer on one surface. Extending laterally across the first surface of the substrate, the laser activated switch includes at least one pair of first and second electrically conductive electrodes. Each electrode of the pair of electrodes is spaced apart from one another to thereby define a gap. Additionally, the laser activated switch includes at least one III-nitride-based photoconductor extending laterally across at least part of the surface of the substrate opposite the ground layer, and extending across the gap defined between the pairs of electrodes. Upon being illuminated, the photoconductor becomes conductive and changes the switch from an “off” state to an “on” state. In one embodiment, the laser activated switch further includes first and second terminals electrically connected to the first and second electrodes, respectively.

Abstract: An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (AlxGa1−x)InP, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (GaxAl1−x)yIn1−yP that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of GaxAl1−xAs that are epitaxially grown on the multi quantum well active gain region.

Abstract: An electron beam pumped semiconductor laser which includes a substrate, an optical gain structure provided on the substrate, the optical gain structure being comprised of a plurality of alternating quantum well layers and isolation layers, the quantum well layers being spaced apart from one another by respective, intervening ones of the isolation layers by a sufficient distance to substantially isolate the quantum well layers from one another, and a first reflective layer provided on a first surface of the optical gain structure. With this construction, the quantum well layers are quantum mechanically uncoupled. Further, the optical gain structure has a total thickness which is sufficient to enable the optical gain structure to be coupled to excitation of an electron beam produced by an electron beam pumping device and directed through the first reflective layer and incident upon the optical gain structure.