Abstract: A method for processing solar cells, and particularly thin solar cells is disclosed. The method contemplates processing the front surface of the cell on a wafer of normal thickness. A transparent substrate is adhered to the front of the processed cell. The bulk semiconductor layer is then thinned to the desired thickness. An amorphous doped semiconductor material is applied to the back surface of the thinned wafer and exposed to pulsed laser energy having a duration and intensity long enough to melt the amorphous material, but short enough to prevent thermal damage to the bondline. A back surface dielectric, backside contact mask and back surface reflector metal complete the cell.